For the the SRAM cell in the figure below : a. Find the Maximum allowa

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For the the SRAM cell in the figure below : a. Find the Maximum allowable W/L for the access transistor of the SRAM cell in the figure below so that in a read operation, the voltage at Q and Q¯ do not change by more than |Vt|. Assume that the SRAM is fabricated in a 0.18 μm technology for which VDD = 1.8 V, Vtn = |Vtp| = 0.5 V and (W/L)n = 1.5 b. Determine the read delay Δt when (W/L)5 = 1.5. Let μnCox = 300 μA/V2. And CB = 2 pF and the sense Amplifier requires a ΔV of minimum magnitude of 0.2 V. [Hint: determine Is and recall that VQ¯ = Vt.]

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For the the SRAM cell in the figure below : a. Find the Maximum allowable W/L for the access transistor of the SRAM cell in the figure below so that in a read operation, the voltage at $Q$ and $\bar{Q}$ do not change by more than $| V_{t} |$ . Assume that the SRAM is fabricated in a $0.18 μ m$ technology for which $V_{D o} = 1.8 V, V_{t n} = | V_{t p} | = 0.5 V$ and $(W / L)_{n} = 1.5$ b. Determine the read delay $Δ t$ when $(W / L)_{s} = 1.5$ . Let $μ_{n} C_{o x} = 300 μ A / V^{2}$ . And $C_{B} = 2 p F$ and the sense Amplifier requires a $Δ V$ of minimum magnitude of $0.2 V$ . [Hint: determine $I_{s}$ and recall that $V_{\bar{Q}} = V_{t}$ .]