Question

Notify Me Bookmark

For the transistor in this question, assume VDD = 1.8 V, μnCox = 400 μAV-1, μpCox = 200 μAV^-1, Vthn = Vthp = 0.5 V, |λp| = 0 V-1) a) For the static CMOS logic gate in this figure. Please draw the pull down network. b) Please size the transistors so that the equivalent network (W/L)’s will be (W/L)neq = 4 and (W/L)peq = 8, (in the worst case) c) Please state the input transitions that yield the worst-case tPHL and tPLH delays. (Remember to take intermediate node capacitances into consideration) d) Please calculate the worst case logical effort for this gate.

For the transistor in this question, assume VDD = 1.8 V, μnCox = 400 μAV-1, μpCox = 200 μAV^-1, Vthn = Vthp = 0.5 V, |λp| = 0 V-1) a) For the static CMOS logic gate in this figure. Please draw the pull down network. b) Please size the transistors so that the equivalent network (W/L)’s will be (W/L)neq = 4 and (W/L)peq = 8, (in the worst case) c) Please state the input transitions that yield the worst-case tPHL and tPLH delays. (Remember to take intermediate node capacitances into consideration) d) Please calculate the worst case logical effort for this gate.

Image text
For the transistor in this question, assume VDD = 1.8 V, μnCox = 400 μAV-1, μpCox = 200 μAV^-1, Vthn = Vthp = 0.5 V, |λp| = 0 V-1) a) For the static CMOS logic gate in this figure. Please draw the pull down network. b) Please size the transistors so that the equivalent network (W/L)’s will be (W/L)neq = 4 and (W/L)peq = 8, (in the worst case) c) Please state the input transitions that yield the worst-case tPHL and tPLH delays. (Remember to take intermediate node capacitances into consideration) d) Please calculate the worst case logical effort for this gate.

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up

Similar/Related Questions

For the transistors in this question, assume VDD = 1.8 V, µnCox = 600µAV -1 , µpCox = 200µAV -1 , Vthn = |Vthp| = 0.5 V, λn = |λp| = 0 V-1 Note that (W/L)1 = 4u/0.18u,(W/L)2 = 8u/0.18u and (W/L)4 = 2 * ( W/L)2 and (W/L)3 = 3*( W/L)1 a) What is the functionality of this circuit? b) Please calculate the high going and low going thresholds of the input. c) Please calculate the high going and low going propagation delays
Solution
0 0

Assuming (W/L)1 = 2 μm/0.18 μm and (W/L)1 = 5 μm/0.18 μm, find the voltage transfer characteristic of the inverter in Fig. 1. Compute the voltage expressions for every operating region of the transistors and find the drain currents of M1 and M2 for Vin = VDD/2. Comment on possible improvements to reduce this current. Figure 1 For the transistors in this question, assume VDD = 1.8 V, μnCox = 100 μAV−1, μpCox = 50 μAV−1, Vthn = 0.4 V, Vthp = −0.5 V, λn = λp = 0.

Solution
0 0

7.12 The enhancement-type MOS transistors have the following parameters: VDD = 5 V VT0 = 1.0 V for both nMOS and pMOS transistor λ = 0.0 V -1 μpCox = 20 μA/V2 μnCox = 50 μA/V2 For a CMOS complex gate OAI432 with (W/L)p = 30 and (W/L)n = 40, (a) Calculate the W/L sizes of an equivalent inverter with the weakest pull-down and pull-up. Such an inverter can be used to calculate worst-case pull-up and pull-down delays, with proper incorporation of parasitic capacitances at internal nodes into the total load capacitance. In this problem, you are asked to calculate only (W/L) worse - case for both p-channel and n-channel MOSFETs by neglecting the parasitic capacitances.

Solution
1 0