For this circuit, when Us = 10 V, K = 0.5 mA/V2, UT = 1 V,RL = 9 kohm, RON = 1 kohm, find out the working region of MOSFET when uGS = 5 V and uGS = 1.5 V. (6 points) (b) For this circuit, when Us = 10 V, K = 0.5 mA/V2, UT = 1 V, RL = 9 kohm, uGS = UGS+uGS (Note: uGS = 1.5 V is the DC bias voltage and uGS is the small signal to be amplified.). Calculate uDS using the nonlinear analysis methods. ( 9 points) Hint: Here, when MOSFET works at the saturation region, iDS = K(uGS - UT)^2

For this circuit, when Us = 10 V, K = 0.5 mA/V2, UT = 1 V,RL = 9 kohm, RON = 1 kohm, find out the working region of MOSFET when uGS = 5 V and uGS = 1.5 V. (6 points) (b) For this circuit, when Us = 10 V, K = 0.5 mA/V2, UT = 1 V, RL = 9 kohm, uGS = UGS+uGS (Note: uGS = 1.5 V is the DC bias voltage and uGS is the small signal to be amplified.). Calculate uDS using the nonlinear analysis methods. ( 9 points) Hint: Here, when MOSFET works at the saturation region, iDS = K(uGS - UT)^2

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For this circuit, when Us = 10 V, K = 0.5 mA/V2, UT = 1 V,RL = 9 kohm, RON = 1 kohm, find out the working region of MOSFET when uGS = 5 V and uGS = 1.5 V. (6 points) (b) For this circuit, when Us = 10 V, K = 0.5 mA/V2, UT = 1 V, RL = 9 kohm, uGS = UGS+uGS (Note: uGS = 1.5 V is the DC bias voltage and uGS is the small signal to be amplified.). Calculate uDS using the nonlinear analysis methods. ( 9 points) Hint: Here, when MOSFET works at the saturation region, iDS = K(uGS - UT)^2

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