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Given an NMOS transistor whose source terminal is connected to the ground, with acceptor concentration 1018 cm-3 in the body, compute a. the body coefficient b. the threshold voltage for VB = -0.11 V i.e. reverse body-bias (RBB) condition (1 point) c. the threshold voltage for VB = +0.11 V i.e. forward body-bias (FBB) condition. Note: 2lambda = 0.18 um is a convention used to represent transistor dimensions in terms of the technology length lambda. This is different from channel length modulation parameter. Sizing is shown in the form of W/L and as a factor of transistor feature size i.e. 2lambda. Assume long-channel device.

Given an NMOS transistor whose source terminal is connected to the ground, with acceptor concentration 1018 cm-3 in the body, compute a. the body coefficient b. the threshold voltage for VB = -0.11 V i.e. reverse body-bias (RBB) condition (1 point) c. the threshold voltage for VB = +0.11 V i.e. forward body-bias (FBB) condition. Note: 2lambda = 0.18 um is a convention used to represent transistor dimensions in terms of the technology length lambda. This is different from channel length modulation parameter. Sizing is shown in the form of W/L and as a factor of transistor feature size i.e. 2lambda. Assume long-channel device.

Given an NMOS transistor whose source terminal is connected to the ground, with acceptor concentration 1018 cm-3 in the body, compute a. the body coefficient b. the threshold voltage for VB = -0.11 V i.e. reverse body-bias (RBB) condition (1 point) c. the threshold voltage for VB = +0.11 V i.e. forward body-bias (FBB) condition. Note: 2lambda = 0.18 um is a convention used to represent transistor dimensions in terms of the technology length lambda. This is different from channel length modulation parameter. Sizing is shown in the form of W/L and as a factor of transistor feature size i.e. 2lambda. Assume long-channel device.

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Given an NMOS transistor whose source terminal is connected to the ground, with acceptor concentration 1018 cm-3 in the body, compute a. the body coefficient b. the threshold voltage for VB = -0.11 V i.e. reverse body-bias (RBB) condition (1 point) c. the threshold voltage for VB = +0.11 V i.e. forward body-bias (FBB) condition. Note: 2lambda = 0.18 um is a convention used to represent transistor dimensions in terms of the technology length lambda. This is different from channel length modulation parameter. Sizing is shown in the form of W/L and as a factor of transistor feature size i.e. 2lambda. Assume long-channel device.

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The diagram below shows the structure of an inverter circuit built using an NMOS transistor of size 3/2, and a pull up resistor RD = 1kohm. Assuming zero body-bias, find the region of operation of the transistor and iD for a. vI = VDD/2 (2 points ) b. vI = VDD/3 (2 points) Repeat the above question with RD = 100kohm. ( 3 points) Note: 2lambda = 0.18 um is a convention used to represent transistor dimensions in terms of the technology length lambda. This is different from channel length modulation parameter. Sizing is shown in the form of W/L and as a factor of transistor feature size i.e. 2lambda. Assume long-channel device.

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