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Given the circuit shown in the following figure, and based on the 180 nm TSMC Technology, assume that the supply voltage (VDD) is 1.8 V, and the length of each transistor (n-type MOSFET) is fixed at L = 180 nm. Make reasonable assumptions for the widths of these transistors. Analyze this circuit by calculation and identify the regions of operation of the two MOSFETs and the drain-source current (IDs) of the MOSFETs, assuming that the transistors are ON. The threshold voltage of the MOSFET is given by Vth = 0.5 V, and μnCox = 70 μA/V2. Also given: VB = 0.7 V, and R = 1 KΩ.

Given the circuit shown in the following figure, and based on the 180 nm TSMC Technology, assume that the supply voltage (VDD) is 1.8 V, and the length of each transistor (n-type MOSFET) is fixed at L = 180 nm. Make reasonable assumptions for the widths of these transistors. Analyze this circuit by calculation and identify the regions of operation of the two MOSFETs and the drain-source current (IDs) of the MOSFETs, assuming that the transistors are ON. The threshold voltage of the MOSFET is given by Vth = 0.5 V, and μnCox = 70 μA/V2. Also given: VB = 0.7 V, and R = 1 KΩ.

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Given the circuit shown in the following figure, and based on the 180 n m TSMC Technology, assume that the supply voltage ( V D D ) is 1.8 V , and the length of each transistor ( n -type MOSFET) is fixed at L = 180 n m . Make reasonable assumptions for the widths of these transistors.
Analyze this circuit by calculation and identify the regions of operation of the two MOSFETs and the drain-source current (IDs) of the MOSFETs, assuming that the transistors are ON. The threshold voltage of the MOSFET is given by V th = 0.5 V , and μ n C o x = 70 μ A / V 2 . Also given: V B = 0.7 V , andR = 1 K Ω .

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