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Given the data in Table 0.1 for a short channel NMOS transistor with VDSAT = 0.6 V and k’ = 100 µA/V2, calculate VT0, γ, λ, 2|φf|, and W/L: Table 0.1 Measured NMOS transistor data

Given the data in Table 0.1 for a short channel NMOS transistor with VDSAT = 0.6 V and k’ = 100 µA/V2, calculate VT0, γ, λ, 2|φf|, and W/L: Table 0.1 Measured NMOS transistor data

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Given the data in Table 0.1 for a short channel NMOS transistor with VDSAT = 0.6 V and k’ = 100 µA/V2, calculate VT0, γ, λ, 2|φf|, and W/L: Table 0.1 Measured NMOS transistor data

Explanation & Steps

Experimental data related to NMOS transistor is given in the question. This data is to be used to determine different parameters like threshold voltage, channel length modulation parameter, width-to-length ratio and body bias effect parameter of NMOS transistor.

First of all determine the mode of operation of NMOS transistor for all data points using the MOSFET short-channel model equations. NMOS can be biased in triode, saturation and velocity saturation mode.

Then carefully use combinations of different rows such that the whole equation has only one variable. In this way, all parameters of NMOS transistor can be calculated.

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Similar/Related Questions

The circuit of Figure 0.6 is known as a source-follower configuration. It achieves a DC level shift between the input and output. The value of this shift is determined by the current I0. Assume γ = 0.4, 2|φf| = 0.6 V, VT0 = 0.43 V, k’ = 115 µA/V2, and λ = 0. The NMOS device has W/L = 5.4µ/1.2µ such that the short channel effects are not observed. a. Derive an expression giving Vi as a function of Vo and VT(Vo). If we neglect body effect, what is the nominal value of the level shift performed by this circuit. b. The NMOS transistor experiences a shift in VT due to the body effect. Find VT as a function of Vo for Vo ranging from 0 to 1.5V with 0.25 V intervals. Plot VT vs. Vo. c. Plot Vo vs. Vi as Vo varies from 0 to 1.5 V with 0.25 V intervals. Plot two curves: one neglecting the body effect and one accounting for it. How does the body effect influence the operation of the level converter? At Vo (body effect) = 1.5 V, find Vo (ideal) and, thus, determine the maximum error introduced by body effect.
Solution
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Consider the following 2T DRAM design. All NMOS transistors are minimum sized ones with W/L ratio of 2:1. The drain diffusion capacitance and gate capacitance of the two transistors are Cd = 15 fF and Cg = 25 fF, respectively. Given k′ = μnCox = 100 μA V2, Vt,n = 0.3 V, CRBL = CWBL = 400 fF, VDD = 1.5 V, γ = 0.15 V, 2φF = −0.6 V and when accessed WL = VDD and RL¯ = 0 V. a) What is the effective store-node capacitance value, Cs? Hint: There is no explicit capacitance present at the storage node. b) Consider writing a '1' to this cell, what is the maximum voltage that can be observed at this storage node? Hint: To write a '1', WBL is driven high (its voltage goes to VDD). c) During a subsequent read operation, what should be the minimum pulse width of RLBAR for a voltage drop of VDD − 2Vtn2 on RBL? Hint: During the read, RBL is pre-charged to VDD before the cell is accessed.

Consider the following 2T DRAM design. All NMOS transistors are minimum sized ones with W/L ratio of 2:1. The drain diffusion capacitance and gate capacitance of the two transistors are Cd = 15 fF and Cg = 25 fF, respectively. Given k′ = μnCox = 100 μA V2, Vt,n = 0.3 V, CRBL = CWBL = 400 fF, VDD = 1.5 V, γ = 0.15 V, 2φF = −0.6 V and when accessed WL = VDD and RL¯ = 0 V. a) What is the effective store-node capacitance value, Cs? Hint: There is no explicit capacitance present at the storage node. b) Consider writing a '1' to this cell, what is the maximum voltage that can be observed at this storage node? Hint: To write a '1', WBL is driven high (its voltage goes to VDD). c) During a subsequent read operation, what should be the minimum pulse width of RLBAR for a voltage drop of VDD − 2Vtn2 on RBL? Hint: During the read, RBL is pre-charged to VDD before the cell is accessed.
Solution
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Consider the following 2 T DRAM design. All NMOS transistors are minimum sized ones with W/L ratio of 2:1. The drain diffusion capacitance and gate capacitance of the two transistors are Cd = 15 fF and Cg = 25 fF, respectively. Given k′ = μnCox = 100 μA/V2, Vt, n = 0.3 V, CRBL = CWBL = 400 fF, VDD = 1.5 V, γ = 0.15 V, 2φF = −0.6 V and when accessed WL = VDD and RL¯ = 0 V.

Solution
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