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Given the following circuit: a) Find the load impedance that absorbs maximum power when connected to terminals a and b. b) What is the value of the maximum power that can be absorbed by the load impedance?

Given the following circuit: a) Find the load impedance that absorbs maximum power when connected to terminals a and b. b) What is the value of the maximum power that can be absorbed by the load impedance?

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  1. Given the following circuit: a) Find the load impedance that absorbs maximum power when connected to terminals a and b . b) What is the value of the maximum power that can be absorbed by the load impedance?

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Consider the following 2T DRAM design. All NMOS transistors are minimum sized ones with W/L ratio of 2:1. The drain diffusion capacitance and gate capacitance of the two transistors are Cd = 15 fF and Cg = 25 fF, respectively. Given k′ = μnCox = 100 μA V2, Vt,n = 0.3 V, CRBL = CWBL = 400 fF, VDD = 1.5 V, γ = 0.15 V, 2φF = −0.6 V and when accessed WL = VDD and RL¯ = 0 V. a) What is the effective store-node capacitance value, Cs? Hint: There is no explicit capacitance present at the storage node. b) Consider writing a '1' to this cell, what is the maximum voltage that can be observed at this storage node? Hint: To write a '1', WBL is driven high (its voltage goes to VDD). c) During a subsequent read operation, what should be the minimum pulse width of RLBAR for a voltage drop of VDD − 2Vtn2 on RBL? Hint: During the read, RBL is pre-charged to VDD before the cell is accessed.

Consider the following 2T DRAM design. All NMOS transistors are minimum sized ones with W/L ratio of 2:1. The drain diffusion capacitance and gate capacitance of the two transistors are Cd = 15 fF and Cg = 25 fF, respectively. Given k′ = μnCox = 100 μA V2, Vt,n = 0.3 V, CRBL = CWBL = 400 fF, VDD = 1.5 V, γ = 0.15 V, 2φF = −0.6 V and when accessed WL = VDD and RL¯ = 0 V. a) What is the effective store-node capacitance value, Cs? Hint: There is no explicit capacitance present at the storage node. b) Consider writing a '1' to this cell, what is the maximum voltage that can be observed at this storage node? Hint: To write a '1', WBL is driven high (its voltage goes to VDD). c) During a subsequent read operation, what should be the minimum pulse width of RLBAR for a voltage drop of VDD − 2Vtn2 on RBL? Hint: During the read, RBL is pre-charged to VDD before the cell is accessed.
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