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I-V characteristics of a MOSFET with xo = 10 nm, Z = 10 μm, and L = 2 μm are shown below. Considering simply the square-law theory (a) Estimate VT from the plot (b) Estimate the effective mobility in the channel and explain (c) Estimate the gate bias for the bottom curve and explain

I-V characteristics of a MOSFET with xo = 10 nm, Z = 10 μm, and L = 2 μm are shown below. Considering simply the square-law theory (a) Estimate VT from the plot (b) Estimate the effective mobility in the channel and explain (c) Estimate the gate bias for the bottom curve and explain

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I-V characteristics of a MOSFET with x o = 10 n m , Z = 10 μ m , and L = 2 μ m are shown below. Considering simply the square-law theory (a) Estimate VT from the plot (b) Estimate the effective mobility in the channel and explain (c) Estimate the gate bias for the bottom curve and explain

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