Implement a CMOS inverter (circuit shown below) in HSPICE using 20 hp PTM-MG models. Simulate its DC and transient characteristics to obtain the following - a. VOUT vs VIN (voltage transfer characteristics) [Use DC simulation in HSPICE] b. V VOUT vs time, VIN vs time [Use transient simulation in HSPICE] Assume, VDD = 0.9 V. Number of Fins = 2 for all transistors.
![Implement a CMOS inverter (circuit shown below) in HSPICE using 20 hp PTM-MG models. Simulate its DC and transient characteristics to obtain the following - a. VOUT vs VIN (voltage transfer characteristics) [Use DC simulation in HSPICE] b. V VOUT vs time, VIN vs time [Use transient simulation in HSPICE] Assume, VDD = 0.9 V. Number of Fins = 2 for all transistors.](https://www.doubtrix.com/uploads/editor/2708797279zqhYrbFGGq.png)
![Consider a CMOS inverter with Vdd = 3.3 V. Please be careful with units. The NMOS transistor has the following characteristics. The channel length is 20 nanometers. For NMOS, Oxide thickness = 5 Angstroms, Threshold Voltage = 0.12 V, mobility = 580 cm^2/V-sec, transistor W = 80 nm. For PMOS, all parameters are the same as NMOS except up = 220 cm2/N-sec. (a) (4pts) compute beta_n in units of [A/V^2]. (b) (4pts) compute the resistance Rn of the inverter. (c) (4pts) compute the resistance Rp of the inverter. (d) (4pts) what is the value of noise margin high (NMH) of the inverter? Assume the CMOS inverter has VDD = 3.3 V, VIL = 0.45 V, VIH = 0.92 V, VOL = 0.12 V and VOH = 2.9 V. (e) (4pts) compute the maximum operating frequency of the inverter when the rise and fall times are equal with a value of 0.1 ns each.](https://www.doubtrix.com/js/ckeditor/filemanager/connectors/php/editor/1684742031-Q53.png)
