In Fig. 11, gm1 = 100uA/V, gm2 = 20uA/V, CL = 1pF. Ignore other parasitic capacitances. (a) Determine the transfer function Vout /Vin (s). (10) (b) Let's suppose that for a dc input of Vin = 1 V, Vout = 2 V. If Vin(t) = 1[V] + 1[mV]u(t), where u(t) is a unit step function at t = 0, determine Vout (t). (10)
![In Fig. 11, gm1 = 100uA/V, gm2 = 20uA/V, CL = 1pF. Ignore other parasitic capacitances. (a) Determine the transfer function Vout /Vin (s). (10) (b) Let's suppose that for a dc input of Vin = 1 V, Vout = 2 V. If Vin(t) = 1[V] + 1[mV]u(t), where u(t) is a unit step function at t = 0, determine Vout (t). (10)](https://www.doubtrix.com/js/ckeditor/filemanager/connectors/php/editor/1697810445-Adfekffuehf.png)
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Work With Experts to Reach at Correct Answers![In Fig. 5, VDD = 2.5 V, VB1 = 1 V, RG = 100 kΩ, RD = 10 kΩ, R1 = 10 kΩ, (W/L)1 = (W/L)2 = (W/L)3 = (W/L)4 = (1/0.1). CC1∼CC3 are very large. (a) Determine the VB2 such that the output (Vout) swing is maximized while all MOSFETs operate in the saturation region. (b) For a dc input of Vin = 1 V, determine Vx, Vz and Vout. Fig. 5 (c) When Vin(t) = 1[V] + 10[mV]sin(ωt) is applied, determine Vout(t). (10)](https://www.doubtrix.com/uploads/editor/3770622967fpfOfEpcYQ.jpg)
