In Fig. 5, VDD = 2.5 V, VB1 = 1 V, RG = 100 kΩ, RD = 10 kΩ, R1 = 10 kΩ

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In Fig. 5, VDD = 2.5 V, VB1 = 1 V, RG = 100 kΩ, RD = 10 kΩ, R1 = 10 kΩ, (W/L)1 = (W/L)2 = (W/L)3 = (W/L)4 = (1/0.1). CC1∼CC3 are very large. (a) Determine the VB2 such that the output (Vout) swing is maximized while all MOSFETs operate in the saturation region. (b) For a dc input of Vin = 1 V, determine Vx, Vz and Vout. Fig. 5 (c) When Vin(t) = 1[V] + 10[mV]sin⁡(ωt) is applied, determine Vout(t). (10)

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In Fig. 5, $V_{D D} = 2.5 V, V_{B 1} = 1 V, R_{G} = 100 k Ω, R_{D} = 10 k Ω, R_{1} = 10 k Ω$ , $(W / L)_{1} = (W / L)_{2} = (W / L)_{3} = (W / L)_{4} = (1 / 0, 1) . C_{C 1} \sim C_{C 3}$ are very large. (a) Determine the $V_{B 2}$ such that the output $(V_{out})$ swing is maximized while all MOSFETs operate in the saturation region. (b) For a dc input of $V_{in} = 1 V_{1}$ , determine $V_{x} V_{z}$ and $V_{out-}$ Fig. 5 (c) When $V_{in} (t) = 1 [V] + 10 [m V] \sin (ω t)$ is applied, determine $V_{out} (t)$ . (10)