In the circuit above, the MOSFET and BJT have the following parameters, K = 4 mA/V2, VT = 0.9 v, β = 100, VBE( active) = 0.7 v, VBE (sat) = 0.8 v (a) Find out the gate voltage of the MOSFET. (b) Calculate V1. (c) Find out the expression for VGS, VDS and VOV. (d) Find the operating mode of the MOSFET using the expressions from (C). [Hint: You don't need any assumption] (e) Calculate IDS and VDS using the given parameters. (f) Assume that the BJT is in the saturation mode. Now, calculate IB, IC, IE. You must validate the given assumption.
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In the circuit above, the MOSFET and BJT have the following parameters, K = 4 mA/V2, VT = 0.9 v, β = 100, VBE( active) = 0.7 v, VBE (sat) = 0.8 v (a) Find out the gate voltage of the MOSFET. (b) Calculate V1. (c) Find out the expression for VGS, VDS and VOV. (d) Find the operating mode of the MOSFET using the expressions from (C). [Hint: You don't need any assumption] (e) Calculate IDS and VDS using the given parameters. (f) Assume that the BJT is in the saturation mode. Now, calculate IB, IC, IE. You must validate the given assumption.
![In the circuit above, the MOSFET and BJT have the following parameters, K = 4 mA/V2, VT = 0.9 v, β = 100, VBE( active) = 0.7 v, VBE (sat) = 0.8 v (a) Find out the gate voltage of the MOSFET. (b) Calculate V1. (c) Find out the expression for VGS, VDS and VOV. (d) Find the operating mode of the MOSFET using the expressions from (C). [Hint: You don't need any assumption] (e) Calculate IDS and VDS using the given parameters. (f) Assume that the BJT is in the saturation mode. Now, calculate IB, IC, IE. You must validate the given assumption.](https://www.doubtrix.com/js/ckeditor/filemanager/connectors/php/editor/1701851720-Chgtitk758jhfi.png)
![7. In the circuit above, the MOSFET and BJT have the following parameters,[5∗6=30] K = 4 mA/V2, VT = 0.9 v, β = 100, VBE(active) = 0.7v, VBE( sat) = 0.8 v a. Find out the gate voltage of the MOSFET. b. Calculate V1. c. Find out the expression for VGS, VDS & Vov d. Find the operating mode of the MOSFET using the expressions from. [Hint: You don't need any assumption] e. Calculate IDS and VDS using the given parameters. f. Assume that the BJT is in the saturation mode. Now, calculate IB, IC, IE. You must validate the given assumption. Figure-3](https://www.doubtrix.com/uploads/editor/4243454131GKDUswDNyZ.jpeg)
![Q6. For the amplifier circuit shown in Fig. Q6, the MOS Transistor Ml has the following parameters: Kn = 1 mAV−2, and VTHN = 1 V. MOS transistors M2 and M3 are identical and have the following parameters: Kp = 1 mAV−2, and VTHP = −1 V. Fig. Q6 (a) Perform the DC analysis of the amplifier circuit shown in Fig. Q6, and show that the DC gate voltage of Ml is 5 V. You need to explain briefly your answer. (b) Calculate the value of RS such that the drain current of MI is 4 mA. Verify that the Ml is operating in the saturation region. [ Ans: Rs = 0.5 kΩ] (c) Calculate the parameters, gm and ro, of the small-signal model of the transistor Ml. [Ans: gm, M1 = 4 mAV−1, and ro, M1 = ∞ ] (d) What is the configuration of this amplifier? (e) Calculate the values of Rin , and Rout . [Ans: Rin = 5 kΩ and Rout = 2 kΩ ] (f) Estimate the voltage gain, Av( = vout /vin ). [ Ans: AV = −1.78]](https://www.doubtrix.com/uploads/editor/9864219624emwVzDjyOi.png)
