In the circuit below, the capacitor is initially discharged. VDD = 1 V, VTH = 0.2 V, β = 0.2mA/V2, and C = 1mF. For the clock voltage shown, plot the voltage waveform vC(t) for t ≥ 0, and label its steady state values.
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In the circuit below, the capacitor is initially discharged. VDD = 1 V, VTH = 0.2 V, β = 0.2mA/V2, and C = 1mF. For the clock voltage shown, plot the voltage waveform vC(t) for t ≥ 0, and label its steady state values.
![[DRAM Analysis] Figure 4 shows a 1 μm×1 μm DRAM cell with NMOS width W = 0.5 μm and CS = 55 fF. Assume VDD = 1 V. Assume that for the NMOS transistor, CD = CG = 1 fF/μm, VTH = 0.2 V, Ileak, n = 1 nA for a W = 0.5 μm device. The cell is arranged in a 128×8 memory block and the wordline and bitline wires have a capacitance of CW = 0.2 fF/μm (i. e. 0.2 fF per unit length). Each bitline is connected to a sense amplifier with ΔVsense = 100 mV and input capacitance 5 fF, and you may ignore loading from any other peripheral circuitry. Use the ideal switch model for the transistor. Figure 4 (a) WRITE: Assume the cell initially stores a " 0 ". In order to write a "1", BL and WL are raised to VDD. What is the final value on node X ? (b) READ: After storing values in your memory, you pre-charge the bitline to VDD/2 and read. What is the final value on the bitline when you are reading a " 1 "?](https://www.doubtrix.com/uploads/editor/7753781189DiGpmnQIJq.png)
