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In the circuit configurations below: a. Identify Drain and Source terminals assuming the device is an NMOS. b. Identify operating region of each transistor (cutoff, saturation, or velocity saturation). c. Determine the drain current Assume VDS at = 1 V, VTN = 0.5 V, and K′n(W/L) = 1 mA/V2. Ignore the body effect. (a) (b) (c) (d) (e) (f) (g)

In the circuit configurations below: a. Identify Drain and Source terminals assuming the device is an NMOS. b. Identify operating region of each transistor (cutoff, saturation, or velocity saturation). c. Determine the drain current Assume VDS at = 1 V, VTN = 0.5 V, and K′n(W/L) = 1 mA/V2. Ignore the body effect. (a) (b) (c) (d) (e) (f) (g)In the circuit configurations below: a. Identify Drain and Source terminals assuming the device is an NMOS. b. Identify operating region of each transistor (cutoff, saturation, or velocity saturation). c. Determine the drain current Assume VDS at = 1 V, VTN = 0.5 V, and K′n(W/L) = 1 mA/V2. Ignore the body effect. (a) (b) (c) (d) (e) (f) (g)

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  1. In the circuit configurations below: a. Identify Drain and Source terminals assuming the device is an NMOS. b. Identify operating region of each transistor (cutoff, saturation, or velocity saturation). c. Determine the drain current
Assume V D S a t = 1 V , V T N = 0.5 V , and K ′ n ( W / L ) = 1 m A / V 2 . Ignore the body effect. (a) (b) (c) (d) (e) (f)
(g)

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