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In the circuit shown below, the transistor has a b of 200. what is the dc voltage at the collector? Replacing the BJT with one of the hybrid-p models (neglecting r0), draw the equivalent circuit of the amplifier. Find the input resistance Rib and Rin and the overall voltage gain (vo/vsig). For an output signal of 0.4V, what value of vsig and vb are required.

In the circuit shown below, the transistor has a b of 200. what is the dc voltage at the collector? Replacing the BJT with one of the hybrid-p models (neglecting r0), draw the equivalent circuit of the amplifier. Find the input resistance Rib and Rin and the overall voltage gain (vo/vsig). For an output signal of 0.4V, what value of vsig and vb are required.

In the circuit shown below, the transistor has a b of 200. what is the dc voltage at the collector? Replacing the BJT with one of the hybrid-p models (neglecting r0), draw the equivalent circuit of the amplifier. Find the input resistance Rib and Rin and the overall voltage gain (vo/vsig). For an output signal of 0.4V, what value of vsig and vb are required.

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In the circuit shown below, the transistor has a b of 200. what is the dc voltage at the collector? Replacing the BJT with one of the hybrid-p models (neglecting r0), draw the equivalent circuit of the amplifier. Find the input resistance Rib and Rin and the overall voltage gain (vo/vsig). For an output signal of 0.4V, what value of vsig and vb are required.

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a. For the circuit shown below, show a clean and labeled small signal equivalent circuit and derive the expression for vo/vb, (vb is the small signal voltage at the base node) vo/vsig, Rin and Rout. (b) This is the design part. The specifications are as follows: The required gain vo/vb = −120 V/V, Ic = 1 mA. and the require voltage swing at the output is ±3 V around the DC value of the output. (Hint: Do not use the generic design rule. You should be able to find the DC voltages at the collector and emitter from the specifications). Assume Vcc = 8 V. For this design assume VA = ∞ (this makes ro = ∞), V T (Thermal Voltage) = 25 mV, VBE = 0.7 V, VCEsat = 0.3 V and β = ∞. Find the values of RC, RE, RB1, and RB2. (c) If the β = 100 instead of the design value, find the new Ic. Now assuming VA = 50 V find vo/vsig, Rout and RIN. For this part assume Rsig = 10 kΩ. Punt: If you could not answer (b), use RC = 3 kΩ, RE = 2 kΩ, RB1 = 50 kΩ, and RG2 = 30 kΩ (d) Run a transient simulation of the designed circuit in Multisim. Use the same BJT used in the lab simulation. Show the input voltage v sig and output voltage v o on the same plot. Choose vsig to be at 1 kHz and 10 mV peak sinusoidal. Compare with calculated value of the gain in part c.
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