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In the CMOS inverter circuit shown if the transconductance parameters of nMOS and nMOS transistor are Kn = Kp = 40 uA/V2 and threshold voltages are Vthn = |Vthp| = 1 V the drain current of Mp is

In the CMOS inverter circuit shown if the transconductance parameters of nMOS and nMOS transistor are Kn = Kp = 40 uA/V2 and threshold voltages are Vthn = |Vthp| = 1 V the drain current of Mp is

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In the CMOS inverter circuit shown if the transconductance parameters of nMOS and nMOS transistor are Kn = Kp = 40 uA/V2 and threshold voltages are Vthn = |Vthp| = 1 V the drain current of Mp is

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Similar/Related Questions

a) For the CMOS inverter shown below, calculate and plot the dc quasi-static current that flows through the transistor as a function of 0 ≤ VIN ≤ VDD. Given: VDD = 5 V For n-MOSFET: μnCOX = 20 μA/V2 W/L = 2 and Vth, n = 1 V For p-MOSFET: μpCOX = 10 μA/V2 W/L = 4 and |Vth,p| = 1 V Where Vth,n and Vth,p are threshold voltages of n-and p-MOSFETs. L and W are channel length and gate width of the MOSFET. μ is the mobility of carriers in the channel region. COX is the gate gate oxide capacitance /area. MOSFET I-V Relations: ID = 0.5 μCOX(W/L){2(VGS−Vth)VDS−VDS2} (Linear region) ID = 0.5 μCox(W/L){(VGS−Vth)2} (Saturation region) Where VGS is the gate-to-source voltage and ID is the drain current. b) Compute dynamic power dissipation if now a square wave input with time period TP is applied to input. Given CL = 0.01 pF and TP = 100 ns.

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Q6. For the amplifier circuit shown in Fig. Q6, the MOS Transistor Ml has the following parameters: Kn = 1 mAV−2, and VTHN = 1 V. MOS transistors M2 and M3 are identical and have the following parameters: Kp = 1 mAV−2, and VTHP = −1 V. Fig. Q6 (a) Perform the DC analysis of the amplifier circuit shown in Fig. Q6, and show that the DC gate voltage of Ml is 5 V. You need to explain briefly your answer. (b) Calculate the value of RS such that the drain current of MI is 4 mA. Verify that the Ml is operating in the saturation region. [ Ans: Rs = 0.5 kΩ] (c) Calculate the parameters, gm and ro, of the small-signal model of the transistor Ml. [Ans: gm, M1 = 4 mAV−1, and ro, M1 = ∞ ] (d) What is the configuration of this amplifier? (e) Calculate the values of Rin , and Rout . [Ans: Rin = 5 kΩ and Rout = 2 kΩ ] (f) Estimate the voltage gain, Av( = vout /vin ). [ Ans: AV = −1.78]

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Consider the CMOS logic circuit shown in Fig. P9.7, which is a simple domino circuit. Node X is connected to a CMOS inverter so that the output of the inverter can be directly fed to the next stage of the domino circuit. a. Explain how the voltage level at node X, after it is precharged to 1.2 V, can be affected by the charge sharing between node X and node Y if their node capacitances are the same. Express the final voltage at node X in terms of the initial voltage at node Y when the charge sharing is completed, following the full precharge operation when the gate terminal of transistor M2 is fixed at 0 V. b. Determine the ratio between device transconductance parameters, kp and kn, of the inverter to prevent any logic error due to charge sharing between nodes X and Y under all circumstances. Assume that the magnitudes of threshold voltages in the inverter are equal to 0.45 V. The use of Level 1 transistor current equations is deemed adequate.

Consider the CMOS logic circuit shown in Fig. P9.7, which is a simple domino circuit. Node X is connected to a CMOS inverter so that the output of the inverter can be directly fed to the next stage of the domino circuit. a. Explain how the voltage level at node X, after it is precharged to 1.2 V, can be affected by the charge sharing between node X and node Y if their node capacitances are the same. Express the final voltage at node X in terms of the initial voltage at node Y when the charge sharing is completed, following the full precharge operation when the gate terminal of transistor M2 is fixed at 0 V. b. Determine the ratio between device transconductance parameters, kp and kn, of the inverter to prevent any logic error due to charge sharing between nodes X and Y under all circumstances. Assume that the magnitudes of threshold voltages in the inverter are equal to 0.45 V. The use of Level 1 transistor current equations is deemed adequate.

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