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In the following current source (a different version of the regulated cascode) calculate Rout and Vout(min) when: a. M1 and M2 are in saturation. b. M1 is in triode and M2 is in saturation. Note: A is the gain of the amplifier. This question does not require numerical calculations, express your answer in MOSFET parameters (gm, rds, A, etc)

In the following current source (a different version of the regulated cascode) calculate Rout and Vout(min) when: a. M1 and M2 are in saturation. b. M1 is in triode and M2 is in saturation. Note: A is the gain of the amplifier. This question does not require numerical calculations, express your answer in MOSFET parameters (gm, rds, A, etc)

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In the following current source (a different version of the regulated cascode) calculate Rout and Vout(min) when: a. M1 and M2 are in saturation. b. M1 is in triode and M2 is in saturation. Note: A is the gain of the amplifier. This question does not require numerical calculations, express your answer in MOSFET parameters (gm, rds, A, etc)

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In the amplifier circuit shown in Fig. Q5, the MOSFETs, M1 and M2, are identical with a Threshold voltage magnitude of 1.2 V, a Conductance Parameter of 2 mA/V2 and they do not experience Channel Length Modulation effect. Fig. Q The MOSFET M1 is in saturation operation and its drain current, ID,M1 = 1.2 mA. (a) Show that the DC drain current of MOSFET M2, ID,M2 = ID,M1 with reasoning. (4 marks) (b) Determine the value of RREF. (4 marks) (c) Which MOSFET, M1 or M2, performs the amplification function? Why? (2 marks) (d) What is the configuration of the amplifier circuit? (1 mark) (e) Determine the values of the 2-port network equivalent parameters of the amplifier: Gm( or Av),Rin and Rout . (5 marks) (f) Determine the gain (vout /vs) of the amplifier. (2 marks) (g) If RA is zero, discuss the effects on the operation of the amplifier circuit. All the other resistors in the amplifier circuit are not changed. (2 marks)
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Consider the circuit shown in Figure 1; note that the numerical value of Vbias is not needed for this problem. Figure 1. Circuit for Problem 1. Here, current source Ibias = 13mA and NMOS devices M1 and M2 have the following properties: • W1 = W2 = 13µm, L1 = L2 = 1µm, kn’ = 500µA/V2 , and VT = 1 V. • The body effect and channel-length modulation effect for devices M1 and M2 should be neglected for this problem. a) If VDD = 5V, determine the numerical value of output current Iout. . Show your work and include appropriate units with your numerical answer. b) If VDD = 5V, determine the numerical value of node voltage Vx. Show your work and include appropriate units with your numerical answer. c) Determine VDDmin, the minimum numerical value of VDD which ensures that device M2 is in saturation. Show your work and include appropriate units with your numerical answer.
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