In the following problems, unless otherwise stated, assume μnCox = 200

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In the following problems, unless otherwise stated, assume μnCox = 200 μA/V2, μpCox = 100 μA/V2, and VTH = 0.4 V for NMOS devices and −0.4 V for PMOS devices.41. If λ = 0, what value of W/L places M1 at the edge of saturation in Fig.6.53 ? 42. With the value of W/L obtained in Problem 41, what happens if VB changes to +0.8 V ? Figure 6.53

In the following problems, unless otherwise stated, assume μnCox = 200 μA/V2, μpCox = 100 μA/V2, and VTH = 0.4 V for NMOS devices and −0.4 V for PMOS devices.41. If λ = 0, what value of W/L places M1 at the edge of saturation in Fig.6.53 ? 42. With the value of W/L obtained in Problem 41, what happens if VB changes to +0.8 V ? Figure 6.53

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In the following problems, unless otherwise stated, assume

μ_{n} C_{o x} = 200 μ A / V^{2}

,

μ_{p} C_{o x} = 100 μ A / V^{2}

, and

V_{T H} = 0.4 V

for NMOS devices and

- 0.4 V

for PMOS devices. 41. If

λ = 0

, what value of

W / L

places

M_{1}

at the edge of saturation in Fig. 6.53 ? 42. With the value of

W / L

obtained in Problem 41 , what happens if

V_{B}

changes to

+ 0.8 V

?

Figure 6.53

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