Question

Notify Me Bookmark

In the following RLC circuit, the source E is 10 V∠0∘, R = 100 W. What is the current at the second half-power frequency after resonance? Please check the closest answer that applies. 70.7 mA∠0∘ 100 mA∠0∘ 70.7 mA < −45∘ 100 mA∠45∘ 70.7 mA∠45∘

In the following RLC circuit, the source E is 10 V∠0∘, R = 100 W. What is the current at the second half-power frequency after resonance? Please check the closest answer that applies. 70.7 mA∠0∘ 100 mA∠0∘ 70.7 mA < −45∘ 100 mA∠45∘ 70.7 mA∠45∘

Image text
In the following RLC circuit, the source E is 10 V ∠ 0 ∘ , R = 100 W . What is the current at the second half-power frequency after resonance? Please check the closest answer that applies. 70.7 m A ∠ 0 ∘ 100 m A ∠ 0 ∘ 70.7 m A < − 45 ∘ 100 m A ∠ 45 ∘ 70.7 m A ∠ 45 ∘

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

10a) (15 Points) In the following circuit, an NMOS transistor is used to switch the current to the LED. Assume the following parameters: Microcontroller: vO = 4.6 V iOH < −5 mA and vOL = 0.4 V, iOL < 8 mA LED: vf = 2.0 V, PLED−max = 200 mW Desired LED current 100 mA Transistor: vT = 1.0 V, RDS(ON) = 0.5 Ω, iD−max = 500 mA a. When the output of the microcontroller is low, what is the operating region of the transistor? b. When the output of the microcontroller is high, what is the operating region of the transistor? c. With the microcontroller output high, and the transistor in the ohmic region, what value of R results in an on-state LED current of 100 mA? d. What standard value of resistor (Table is on page 33 of the text) comes closest to the desired LED current? 10b) Suppose we rearrange the NMOS circuit in problem 10 as shown. Using the same parameters as in the previous problem, answer the following: a. When the output of the microcontroller is low, what is the operating region of the transistor? b. Suppose that when the output of the microcontroller is high, there is 100 mA current through the LED with the same resistor as found in problem 10a. What is the source voltage relative to ground? What is the gate-source voltage? c. Do you expect this arrangement to work for controlling the LED? Explain. 10c) (15 Points) In this problem, the NMOS transistor in problem 10b has been replaced with a PMOS transistor as shown. Assume all the parameters are the same, noting that the gate must be the threshold voltage below the source to get out of cutoff. a. When the output of the microcontroller is high, what is the operating region of the transistor? b. When the output is low, what is the operating region of the transistor? c. Does this arrangement to work for controlling the LED? Explain.10a) (15 Points) In the following circuit, an NMOS transistor is used to switch the current to the LED. Assume the following parameters: Microcontroller: vO = 4.6 V iOH < −5 mA and vOL = 0.4 V, iOL < 8 mA LED: vf = 2.0 V, PLED−max = 200 mW Desired LED current 100 mA Transistor: vT = 1.0 V, RDS(ON) = 0.5 Ω, iD−max = 500 mA a. When the output of the microcontroller is low, what is the operating region of the transistor? b. When the output of the microcontroller is high, what is the operating region of the transistor? c. With the microcontroller output high, and the transistor in the ohmic region, what value of R results in an on-state LED current of 100 mA? d. What standard value of resistor (Table is on page 33 of the text) comes closest to the desired LED current? 10b) Suppose we rearrange the NMOS circuit in problem 10 as shown. Using the same parameters as in the previous problem, answer the following: a. When the output of the microcontroller is low, what is the operating region of the transistor? b. Suppose that when the output of the microcontroller is high, there is 100 mA current through the LED with the same resistor as found in problem 10a. What is the source voltage relative to ground? What is the gate-source voltage? c. Do you expect this arrangement to work for controlling the LED? Explain. 10c) (15 Points) In this problem, the NMOS transistor in problem 10b has been replaced with a PMOS transistor as shown. Assume all the parameters are the same, noting that the gate must be the threshold voltage below the source to get out of cutoff. a. When the output of the microcontroller is high, what is the operating region of the transistor? b. When the output is low, what is the operating region of the transistor? c. Does this arrangement to work for controlling the LED? Explain.10a) (15 Points) In the following circuit, an NMOS transistor is used to switch the current to the LED. Assume the following parameters: Microcontroller: vO = 4.6 V iOH < −5 mA and vOL = 0.4 V, iOL < 8 mA LED: vf = 2.0 V, PLED−max = 200 mW Desired LED current 100 mA Transistor: vT = 1.0 V, RDS(ON) = 0.5 Ω, iD−max = 500 mA a. When the output of the microcontroller is low, what is the operating region of the transistor? b. When the output of the microcontroller is high, what is the operating region of the transistor? c. With the microcontroller output high, and the transistor in the ohmic region, what value of R results in an on-state LED current of 100 mA? d. What standard value of resistor (Table is on page 33 of the text) comes closest to the desired LED current? 10b) Suppose we rearrange the NMOS circuit in problem 10 as shown. Using the same parameters as in the previous problem, answer the following: a. When the output of the microcontroller is low, what is the operating region of the transistor? b. Suppose that when the output of the microcontroller is high, there is 100 mA current through the LED with the same resistor as found in problem 10a. What is the source voltage relative to ground? What is the gate-source voltage? c. Do you expect this arrangement to work for controlling the LED? Explain. 10c) (15 Points) In this problem, the NMOS transistor in problem 10b has been replaced with a PMOS transistor as shown. Assume all the parameters are the same, noting that the gate must be the threshold voltage below the source to get out of cutoff. a. When the output of the microcontroller is high, what is the operating region of the transistor? b. When the output is low, what is the operating region of the transistor? c. Does this arrangement to work for controlling the LED? Explain.
Solution
0 0

Given VDD = 3 V and using IREF = 100 μA, it is required to design the following circuit to obtain an output current whose nominal value is 100 μA. Find R if M1 and M2 are matched and have channel lengths of 1 μm, channel widths of 10 μm, Vt = 0.7 V, and kn′ = 200 μA/V2. What is the lowest possible value of Vo ? Assuming that for this process technology the Early voltage VA′ = 1 /λ′ = 20 V/μm, find the output resistance of the current source. Also, find the change in output current resulting from a +1 V change in V0. Solution aprox. : VGS = 1.016 VR = 19.84 kΩ, Vo, min = 0.316 V, Ro = 0.2 MΩ, ΔIo = 5 μA Solution acc. : VGS = 1.00854 V, R = 19.914 kΩ, Vo, min = 0.30854 V, Ro = 0.2 MΩ, ΔIo = 5 μA
Solution
0 0

For the following circuit, n-MOSFET Q1 works as a common source (CS) amplifier while Q2 and Q3 work as a current mirror. These transistors are identical with Vt = 2 V, kn = μnC0 x(W/L) = 2 mA/V2, VA = 100 V, and VDD = VSS = 5 V. (5%) (a) To make sure the resistance of the current mirror is large enough, we would like to have the output resistance (for Q3)r0 = VA/ID = 100 kΩ. Please find the corresponding Rref . (15%) (b) Followed by (a), if the open-circuit gain ( Aw without Rt ) of the CS amplifier is designed to be Avo = −10. What is RD ? What are the corresponding VD and VS for Q1? (5%) (c) Followed by (b), if now the load RL is connected at the drain with a capacitor CL = 100 nF, what is the minimal RL to operate this circuit at low frequency f(L(dB) < 500 Hz. Figure 3
Solution
0 0