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It is required to design a minimum-area pseudo-NMOS inverter with equal high and low noise margins using a 1.3-V supply and devices for which |Vt| = 0.4 V, k

It is required to design a minimum-area pseudo-NMOS inverter with equal high and low noise margins using a 1.3-V supply and devices for which |Vt| = 0.4 V, k

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It is required to design a minimum-area pseudo-NMOS inverter with equal high and low noise margins using a 1.3-V supply and devices for which |Vt| = 0.4 V, k

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D *14.8 It is required to design a minimum-area pseudoNMOS inverter with equal high and low noise margins using a 2.5−V supply and devices for which |Vt| = 0.5 V, kn′ = 4 kp′ = 120 μA/V2, and the minimum-size device has (W/L) = 1. Use r = 3.2 and show that NML≃NMH. Specify the values of (W/L)n and (W/L)p. What is the static power dissipated in this gate? What is the ratio of propagation delays for low-to-high and high-to-low transitions? For an equivalent load capacitance of 0.1 pF, find tPLH, tPHL, and tP. At what frequency of operation would the static and dynamic power levels be equal? Is this speed of operation possible in view of the tP value you found?
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Part 1: Design of a CMOS Inverter Objective: Design a CMOS inverter so as to achieve a given performance specification. Figure 1. CMOS Inverter Consider a CMOS inverter such as the one shown in Figure 1. For the NMOS driver, use VT0 = 0.4 V, kn′ = 432 μA/V2, 2ϕF∣ = 0.88 V, γ = 0.2 V1 /2, λ = 0 V−1, Wn = 25 μm, and Ln = 0.1 μm. For the PMOS load, use VT0 = −0.4 V, kp′ = 108 μA/V2, |2ϕF| = 0.88 V, γ = 0.2 V1 /2, λ = 0 V−1, and Lp = 0.1 μm. ⇒ Design the inverter - i. e. , determine the value of Wp for the PMOS load - so as to make the noise margins equal: NML = NMH. In order to limit calculation complexity while still obtaining a reasonably accurate estimate, use the long-channel equations for NMOS and PMOS devices calculations. Round your calculated value of Wp to the nearest multiple of 0.05 μm. ⇒ Using your rounded value for Wp, calculate the expected value for the switching threshold, Vth. ⇒ Lastly, double the rounded value of Wp, then calculate the revised value of the switching threshold, Vth . Comment on the effect of decreasing the ratio KR = kdriver kload .

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This problem investigates the effect of velocity saturation (Section 15.1.3) on the operation of a pseudo-NMOS inverter fabricated in a 0.13-um CMOS process for which VDD = 1.3 V, Vt = 0.4 V, kn = 5kp = 500 uA/V2, and |VDSsatp| = 0.6 V. Consider the case with vI = VDD and vO = VOL. Note that QP will be operating in the velocity-saturation region. Find its current IDsat and use it to determine VOL.
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