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Large Signal Analysis: Considered the circuit shown below, sketch vOUT as a function of vIN as vIN changes from 0 to 3 V. Assume VTH = 0.5 V. Ignore the channel length modulation effect. Label all important region changing points and the corresponding mode of operation. [Hint: MOSFET is a symmetrical device, so carefully think about which is the source and which is the drain]

Large Signal Analysis: Considered the circuit shown below, sketch vOUT as a function of vIN as vIN changes from 0 to 3 V. Assume VTH = 0.5 V. Ignore the channel length modulation effect. Label all important region changing points and the corresponding mode of operation. [Hint: MOSFET is a symmetrical device, so carefully think about which is the source and which is the drain]

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Large Signal Analysis: Considered the circuit shown below, sketch vOUT as a function of vIN as vIN changes from 0 to 3 V. Assume VTH = 0.5 V. Ignore the channel length modulation effect. Label all important region changing points and the corresponding mode of operation. [Hint: MOSFET is a symmetrical device, so carefully think about which is the source and which is the drain]

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