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Let ID1 = 1 mA and VDD = 5 V. Determine the value of VB2 that maximizes the output swing while keeping the transistors in saturation. 2. For the circuit in Figure 1(b), report the values of the following: a. gm b. Vo c. RB d. AI , the short circuit current gain. Figure 1: NMOS Current Mirrors (a) without cascoding and (b) with cascoding. Table 1: Hand analysis device parameters for the ALD1101 and ALD1102 MOSFETs.

Let ID1 = 1 mA and VDD = 5 V. Determine the value of VB2 that maximizes the output swing while keeping the transistors in saturation. 2. For the circuit in Figure 1(b), report the values of the following: a. gm b. Vo c. RB d. AI , the short circuit current gain. Figure 1: NMOS Current Mirrors (a) without cascoding and (b) with cascoding. Table 1: Hand analysis device parameters for the ALD1101 and ALD1102 MOSFETs.

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Let ID1 = 1 mA and VDD = 5 V. Determine the value of VB2 that maximizes the output swing while keeping the transistors in saturation. 2. For the circuit in Figure 1(b), report the values of the following: a. gm b. Vo c. RB d. AI , the short circuit current gain. Figure 1: NMOS Current Mirrors (a) without cascoding and (b) with cascoding. Table 1: Hand analysis device parameters for the ALD1101 and ALD1102 MOSFETs.

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Design the circuit in Figure 1 for maximum swing such that the reference current that flows through R1 is 2 mA, and ID1 = ID2 = 1mA. Use the ALD1101 and ALD1102 MOSFET transistors for your design. VDD = −Vss = 5 V. Report the following: 1. R 2. Vov for all transistors. 3. The required DC common mode voltage at the gates of Q1 and Q2. Design for maximum swing. 4. Ad, the differential gain. Part 2 Simulate the circuit in LTSpice. Does the simulation show the same reference current and gain as the expectations from the hand calculations? To check the gain, apply a small sine wave to Vid1 with a DC offset equal to the DC common mode signal and compare the amplitudes of the input and output waves. A suitable sine wave input would be 10mV amplitude at 1KHz.

Design the circuit in Figure 1 for maximum swing such that the reference current that flows through R1 is 2 mA, and ID1 = ID2 = 1mA. Use the ALD1101 and ALD1102 MOSFET transistors for your design. VDD = −Vss = 5 V. Report the following: 1. R 2. Vov for all transistors. 3. The required DC common mode voltage at the gates of Q1 and Q2. Design for maximum swing. 4. Ad, the differential gain. Part 2 Simulate the circuit in LTSpice. Does the simulation show the same reference current and gain as the expectations from the hand calculations? To check the gain, apply a small sine wave to Vid1 with a DC offset equal to the DC common mode signal and compare the amplitudes of the input and output waves. A suitable sine wave input would be 10mV amplitude at 1KHz.
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