Question

Notify Me Bookmark

List the advantages/disadvantages of the resistive SRAM shown in Fig. 1 as compared with the conventional 6 T-SRAM cell. Explain Read and Write operation of conventional 6 T-SRAM cell. Consider (W/L)access = 3Wmin/Lmin , (W/L)pdn = 5Wmin/Lmin , (W/L)pup = 4Wmin/Lmin , VDD = 1 V, Vthn = |Vthp| = 0.4 V, Coxn = Coxp , μn = μp. Determine the read noise margin considering conventional 6 T-SRAM cell. Consider VDD = 1 V, Vthn = |Vthp | = 0.4 V, determine the sizing ratio between Access transistor and Pulldown-NMOS for reliable read operation of conventional 6 T-SRAM cell.

List the advantages/disadvantages of the resistive SRAM shown in Fig. 1 as compared with the conventional 6 T-SRAM cell. Explain Read and Write operation of conventional 6 T-SRAM cell. Consider (W/L)access = 3Wmin/Lmin , (W/L)pdn = 5Wmin/Lmin , (W/L)pup = 4Wmin/Lmin , VDD = 1 V, Vthn = |Vthp| = 0.4 V, Coxn = Coxp , μn = μp. Determine the read noise margin considering conventional 6 T-SRAM cell. Consider VDD = 1 V, Vthn = |Vthp | = 0.4 V, determine the sizing ratio between Access transistor and Pulldown-NMOS for reliable read operation of conventional 6 T-SRAM cell.

Image text
  1. List the advantages/disadvantages of the resistive SRAM shown in Fig. 1 as compared with the conventional 6T-SRAM cell.
  2. Explain Read and Write operation of conventional 6T-SRAM cell.
  3. Consider ( W / L ) access = 3 W min / L min , ( W / L ) p d n = 5 W min / L min , ( W / L ) pup = 4 W min / L min , V D D = 1 V , V thn = | V thp | = 0.4 V , C o x n = C oxp , μ n = μ p . Determine the read noise margin considering conventional 6T-SRAM cell.
  4. Consider V D D = 1 V , V thn = | V thp | = 0.4 V , determine the sizing ratio between Access transistor and Pulldown-NMOS for reliable read operation of conventional 6T-SRAM cell.

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

For this problem, neglect capacitances and ro in transistors and use long-channel equations. M1 is operated with Vov = 0.6 V. The amplifier is intended to be used with a source resistance RS = 50 Ω. (a) Calculate (W/L)1 for an input impedance equal to 50 Ω. What is the required ID1? (b) If (W/L)2 = (W/L)3 what is the required value if I bias ? (c) Calculate R for a voltage gain vo/vi = 10 (d) Symbolically, calculate the NF considering the contribution of M1, M2 and R. (e) To reduce noise figure, is it better to use a high or a low overdrive in M2 and M3? Explain why. (f) If |Vov2| = 1 V, calculate (W/L)2, the DC component at vo and F in dB. CMOS process data: VDD = 1.8 V. For NMOS, Vthn = 0.4 V, μn = 400 cm2/Vs, Cox = 9 fF/μm2 and γn = 1. The parameters for PMOS transistors are k′ = μpCox = 90 μA/V2, Vthp = −0.4 V and γp = 0.8.
Solution
0 0

Consider a standard 6-T SRAM cell. Use the following parameters. L = 45 nm, VDD = 1.2 V. For all the NMOS transistors, widths are 450 nm and size the pull-up PMOS transistors as three-times the widths of the pulldown NMOS transistors. |Vth| = 0.4 V⋅ μn μp = 2. a. Determine Cell ratio (ratio of the widths of pull-down NMOS and access transistor) for read. b. Determine Pull - up ratio (ratio of the widths of pull-up PMOS and access transistor) for write. c. Write the regions of operation of all the transistors for both a) and b). d. Determine VREAD. e. Determine the condition to avoid destructive read.
Solution
0 0

Design an operational transconductance amplifier (OTA) shown in Fig. 2, to satisfy the following specifications: gain bandwidth product (GBW) is 100M Hz for CL = 2p F, bandwidth is 1MHz, VDD = 1.8 V, Vtn = |Vtp| = 0.45 V, µnCox = 270 µA/V2, µpCox = 65 µA/V2, and λN = λP = 0.08 V-1 . For simplicity, you may operate all devices at the same overdrive voltage (VOV ), neglect body effect, and velocity saturation effect. Determine the currents, (W/L) ratios of the MOS transistor, and input common-mode range (ICMR) of the amplifier. 1. W L ratios of transistors and IBIAS • [(3 + 3 + 3 + 3 =)12pts] (W/L )M1,2 = ; (W/L)M3,4 = (W/L)M5,6 = ; IBIAS = 2. ≤ VICMR ≤ [6 pts] 3. ≤ Vout ≤ [4pts] 4. Total power dissipation. Pdiss = [2pts] 5. Identify vin(+) and vin(-) in Fig. 2. [1 pts] Figure 2: Transconductance amplifier.
Solution
0 0