Measurements on a MOSFET operating in the sub-threshold conduction reg

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Measurements on a MOSFET operating in the sub-threshold conduction region indicate that the current changes by a factor of 10 for every 80-mV change in vGS and that iD = 20 nA at vGS = 0.16 V. (a) Find the value of iD at vGS = 0. (b) For a chip having 1 billion transistors, find the current drawn from the 1-V supply VDD as a result of subthreshold conduction. Hence, estimate the resulting static power dissipation.

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Measurements on a MOSFET operating in the sub-threshold conduction region indicate that the current changes by a factor of 10 for every 80-mV change in vGS and that iD = 20 nA at vGS = 0.16 V. (a) Find the value of iD at vGS = 0. (b) For a chip having 1 billion transistors, find the current drawn from the 1-V supply VDD as a result of subthreshold conduction. Hence, estimate the resulting static power dissipation.