Modify the MOS_N model VTO and KP values to 1.65 V and 0.05 A/V2, resp

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Modify the MOS_N model VTO and KP values to 1.65 V and 0.05 A/V2, respectively. Take screenshots of all transient analyses for your lab report. Build this circuit, choosing RG2 so that the gate voltage will produce a drain current of ∼20 mA and VD ∼ VDD/2 (a good design goal). RG2 = VGS (actual) = VDS⁡(actual) = ID(actual) = Return the circuit to what you had in Part I, step 1. Calculate the MOSFET transconductance (gm). Read section 7.2 . 1 for appropriate equations. gm(calc) =

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Modify the MOS_N model VTO and KP values to

1.65 V

and

0.05 A / V^{2}

, respectively. Take screenshots of all transient analyses for your lab report.

Build this circuit, choosing $R_{G 2}$ so that the gate voltage will produce a drain current of $\sim 20 m A$ and $V_{D} \sim V_{D D} / 2$ (a good design goal). $R_{G 2} =$ $V_{GS} ($ actual $) =$ $VDS ($ actual $) =$ $I D ($ actual $) =$ Return the circuit to what you had in Part I, step 1.
Calculate the MOSFET transconductance $(g_{m})$ . Read section 7.2 .1 for appropriate equations. $g_{m} ($ calc $) =$