MOS C-V Characteristic. The capacitance vs. gate voltage characteristi

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MOS C-V Characteristic. The capacitance vs. gate voltage characteristic of a simple MOS capacitor of area 100 μm×100 μm is as shown: Assuming that there are no oxide charges, answer the following questions: a) What is the thickness of the gate oxide (SiO2)? b) Estimate the values of VFB and VT. c) Is the substrate lightly doped ( < 1018 cm−3) ? Explain how you have arrived to the answer?

MOS C-V Characteristic. The capacitance vs. gate voltage characteristic of a simple MOS capacitor of area 100 μm×100 μm is as shown: Assuming that there are no oxide charges, answer the following questions: a) What is the thickness of the gate oxide (SiO2)? b) Estimate the values of VFB and VT. c) Is the substrate lightly doped ( < 1018 cm−3) ? Explain how you have arrived to the answer?

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MOS C-V Characteristic. The capacitance $v s$ . gate voltage characteristic of a simple MOS capacitor of area $100 μ m \times 100 μ m$ is as shown:

Assuming that there are no oxide charges, answer the following questions: a) What is the thickness of the gate oxide

({S i O}_{2})

? b) Estimate the values of

V_{F B}

and

V_{T}

. c) Is the substrate lightly doped

(< 10^{18} {c m}^{- 3})

? Explain how you have arrived to the answer?

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