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MOSFET An enhancement-mode, n-channel MOSFET has a threshold voltage Vt = 1.5 V, transconductance parameter kn = 2 mA/V2, and drain-source voltage VDS = 5 V. a) At what gate-source voltage VGS will the transistor "turn on", that is the channel just forms? b) At what VGS will the device be at the boundary between saturation and the triode region? c) At what VGS will the drain current ID be 2 mA.

MOSFET An enhancement-mode, n-channel MOSFET has a threshold voltage Vt = 1.5 V, transconductance parameter kn = 2 mA/V2, and drain-source voltage VDS = 5 V. a) At what gate-source voltage VGS will the transistor "turn on", that is the channel just forms? b) At what VGS will the device be at the boundary between saturation and the triode region? c) At what VGS will the drain current ID be 2 mA.

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  1. MOSFET
An enhancement-mode, n-channel MOSFET has a threshold voltage V t = 1.5 V , transconductance parameter k n = 2 m A / V 2 , and drain-source voltage V D S = 5 V . a) At what gate-source voltage V G S will the transistor "turn on", that is the channel just forms? b) At what V G S will the device be at the boundary between saturation and the triode region? c) At what V G S will the drain current I D be 2 m A .

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