p-n Junctions. A silicon diode has an abrupt alloy doping profile at the junction with NA = 1021 m−3 and ND = 1020 m−3. The Fermi level is 0.40 eV above the valance band on the p side and 0.50 eV below the CB on the n side. Given that the permittivity of Si = 12ε0, and the junction area is exactly 1 mm2, calculate: (i) V0 (the contact P. D. across the junction at zero bias), and (ii) for a reverse bias of 0.50 V, calculate (1) the barrier height VB, (2) the maximum field in the depletion layer, and (3) the depletion layer capacitance.
