Question

Notify Me Bookmark

P R O B LEM 6.3 Consider a family of logic gates that operate under the static discipline with the following voltage thresholds: VOL = 1 V, VIL = 1.3 V, VOH = 4 V, and VIH = 3 V. Consider the N-input NAND gate design shown in Figure 6.63 . In the design R = 100 k and RON for the MOSFETs is given to be 1 k. VT for the MOSFETs is 1.5 V. What is the maximum value of N for which the NAND gate will satisfy the static discipline? What is the maximum power dissipated by the NAND gate for this value of N ? FIGURE 6.63

P R O B LEM 6.3 Consider a family of logic gates that operate under the static discipline with the following voltage thresholds: VOL = 1 V, VIL = 1.3 V, VOH = 4 V, and VIH = 3 V. Consider the N-input NAND gate design shown in Figure 6.63 . In the design R = 100 k and RON for the MOSFETs is given to be 1 k. VT for the MOSFETs is 1.5 V. What is the maximum value of N for which the NAND gate will satisfy the static discipline? What is the maximum power dissipated by the NAND gate for this value of N ? FIGURE 6.63

Image text
P R O B LEM 6.3 Consider a family of logic gates that operate under the static discipline with the following voltage thresholds: V O L = 1 V , V I L = 1.3 V , V O H = 4 V , and V I H = 3 V . Consider the N -input NAND gate design shown in Figure 6.63 . In the design R = 100 k and R O N for the MOSFETs is given to be 1 k . V T for the MOSFETs is 1.5 V . What is the maximum value of N for which the NAND gate will satisfy the static discipline? What is the maximum power dissipated by the NAND gate for this value of N ? FIGURE 6.63

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

(a) State the advantages of the CMOS inverter over the NMOS inverter. (b) Realize the following logic function using NMOS & CMOs logic gates. F = (A+B).(C+D).E (c) For a particular logic family for which the supply voltage is V+, VOL = 0.18 V+. VOH = 0.87 V+, VIL = 0.35 V+, and VIH = 0.55 V+. (i) What are the noise margins (NML and NMH)? (ii) What is the width of transition region? (iii) For a maximum noise margin of 2 V, what value of V + is required (d) If VA = 4 V, find Vout for the NMOS inverter shown in figure 5. (Given VT = 1 V and μnCox = 40 μA/V2) (e) If VA = VB = VC = 4 V, find Vout for the 3 input NAND gate shown in Figure 6. (Given VT = 1 V and μnCox = 40 μA/V2)
Solution
0 0

P R O B LEM II. 6 a) Express F¯ in a simplified sum-of-products form given that F = AB¯+CD¯. b) Implement the logic function F = AB¯+CD¯ with an NMOS digital logic circuit that obeys the static discipline defined by the low-level and high-level logic thresholds VIL = VOL = VL and VIH = VOH = VH, respectively. Assume the supply voltage is VS, and that the on-state resistance of the NMOS transistors is RON. Determine the lowest value of the pull-up resistor RPU for which the circuit will obey the static discipline in terms of RON, VS, VL, and VH; not all variables need appear in your answer. c) Implement the logic function F = AB¯+CD¯ with a CMOS digital logic circuit. (Hint: make use of the result from part (a). ) d) Suppose that the NMOS and CMOS circuits above drive a capacitance CL. Assume that the on-state resistance of both the PMOS and NMOS transistors is RON. For both the NMOS and CMOS circuits determine the worst-case output rise time. For the purpose of this problem, assume that the worst-case output rise time is the time the output takes to go from 0 V to VH. Sketch the form of the output for both the NMOS and the CMOS circuit. e) Suppose that the inputs are arranged such that B = 1, C = 0, and D = 1, and that a 0−V to 5−V square-wave signal is applied to the input A. Assume the square wave cycle time is T, and that T is large enough so that the output comes close to its steady state value for both falling and rising transitions. Under these conditions, compute the power consumed by the CMOS and NMOS circuits when driving the capacitance CL load.
Solution
0 0

Question 3 (25 points) A particular logic inverter has VDD = 5 V, VSS = 0 V, VH = 4.8 V, VL = 0.1 V, VOH = 4.5 V, VIH = 3.5 V, VOL = 0.5 V, VIL = 1 V, and VM = 2.3 V. For simplicity, I will represent the VTC as f(x). For example, the value of the output voltage when the input voltage is 1 V is given by f(1). At which values of input will the slope of the VTC be -1? (Select all that apply; wrong answers are penalized.) 0.5 1 3.5 4.5 None of the above Question 4 (25 points) A particular logic inverter has VDD = 5 V, VSS = 0 V, VH = 4.8 V, VL = 0.1 V, VOH = 4.5 V, VIH = 3.5 V, VOL = 0.5 V, VIL = 1 V, and VM = 2.3 V. Determine the noise margin for the low input, NML. Enter your answer in V rounded to one decimal place. Your Answer: Answer

Solution
2 0