P4. [Vgs vs. Id] A n-channel MOSFET with kn = 10 mA/V2, threshold voltage Vtn = 1 V, find VGS and VDS when the transistor is working at the boundary of saturation-triode across various drain current ID.
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P4. [Vgs vs. Id] A n-channel MOSFET with , threshold voltage , find and when the transistor is working at the boundary of saturation-triode across various drain current .
![P4. [Vgs vs. Id] A n-channel MOSFET with kn = 10 mA/V2, threshold voltage Vtn = 1 V, find VGS and VDS when the transistor is working at the boundary of saturation-triode across various drain current ID.](https://www.doubtrix.com/uploads/editor/6472333147wfLuCfGqiL.png)
![P5. [DC bias and swing] A n -channel MOSFET with kn = 10 mA/V2, threshold voltage Vtn = 1 V, VDD = 4 V, RD = 1 kΩ, λ = 0. (1) Draw VTC: VDS vs. VGS; (2) Denote region transition coordinates on the VTC curve (A: cut-off -> saturation, B: saturation -> triode, C: gate voltage = VDD); (3) If the biasing VGS|Q = 1.5 V, please determine the biasing current IDS, DC drain-source voltage VDS∣Q and signal voltage gain Av = vds/vgs around this biasing point Q. (4) Please determine the allowable symmetric input signal swing peak vgs,peak that maintains the operations within saturation region with the help of the VTC. (5) Assuming that you do not have VTC, estimate the vgs,peak again by assuming constant voltage gain around Q (hint: saturation region: VDS−vds >= VGS + vgs)](https://www.doubtrix.com/uploads/editor/7901835021yxtNWrqIaK.png)
![Problem 3: MOSFET Subthreshold Leakage Current For a MOSFET operating in the subthreshold regime (VGS < VT), the reduction in gate voltage needed to reduce the drain current by one decade is defined as the "subthreshold swing": S = (kT/q)(ln10)[1 + (Cdep,min/Cox)] The units of S are mV/ decade. Note that the smallest value of S attainable at room temperature (300 K) is 60 mV/ decade. Consider a short n-channel MOSFET with Toxe = 2 nm and WT = 35 nm. Suppose the threshold voltage (VT) for this device is simply defined to be the value of VGS at which the normalized drain current IDS/(W/L) reaches 100 nA for VDS = 100 mV. (a) Find the subthreshold swing S (b) If the normalized leakage current must be less than or equal to 10 pA when VGS = 0 V and VDS = 100 mV, what is the minimum threshold voltage this device can have?](https://www.doubtrix.com/uploads/editor/0741048006evOUdiunGN.png)
