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PMOS: VT0 = −0.6 V, μpCox = 8 μA/V2, no Body Effect and Channel Length Modulation, W2/L2 = W4/L4 = 6. (a) Determine the maximum size of M5 and M6 so that the cell will not flip while reading, when the reading voltage is VDD/2. (b) Determine the minimum size of M5 and M6 so that the cell will flip while writing. Figure 4: 6-T SRAM for Problem 4

PMOS: VT0 = −0.6 V, μpCox = 8 μA/V2, no Body Effect and Channel Length Modulation, W2/L2 = W4/L4 = 6. (a) Determine the maximum size of M5 and M6 so that the cell will not flip while reading, when the reading voltage is VDD/2. (b) Determine the minimum size of M5 and M6 so that the cell will flip while writing. Figure 4: 6-T SRAM for Problem 4

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PMOS: V T 0 = − 0.6 V , μ p C o x = 8 μ A / V 2 , no Body Effect and Channel Length Modulation, W 2 / L 2 = W 4 / L 4 = 6 . (a) Determine the maximum size of M5 and M6 so that the cell will not flip while reading, when the reading voltage is V D D / 2 . (b) Determine the minimum size of M5 and M6 so that the cell will flip while writing. Figure 4: 6-T SRAM for Problem 4

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