Problem 1: Consider a silicon MOS capacitor with a C-V characteristic

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Problem 1: Consider a silicon MOS capacitor with a C-V characteristic as shown below. The gate insulator is SiO2. The measured maximum and minimum capacitance values are Cmax = 1.2×10−2 F/m2 and Cmin = 9.5×10−4 F/m2. Assume T = 300 K. (a) Is this C-V characteristic measured at low frequency or high frequency? (10 points) (b) What is the thickness of the SiO2 gate insulator? (10 points) (c) What is the depletion layer capacitance at the onset of inversion? (10 points) (d) What is the doping density of silicon in this MOS capacitor? (10 points)

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Problem 1: Consider a silicon MOS capacitor with a C-V characteristic as shown below. The gate insulator is

{S i O}_{2}

. The measured maximum and minimum capacitance values are

C_{max} = 1.2 \times 10^{- 2} F / m^{2}

and

C_{min} = 9.5 \times 10^{- 4} F / m^{2}

. Assume

T = 300 K

. (a) Is this C-V characteristic measured at low frequency or high frequency? (10 points) (b) What is the thickness of the

{S i O}_{2}

gate insulator? (10 points) (c) What is the depletion layer capacitance at the onset of inversion? (10 points) (d) What is the doping density of silicon in this MOS capacitor? (10 points)