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Problem 1: Determine the region of operation (e. g. , Cutoff, Linear, Blown-up, Triode, Ohmic, Resistive, Saturation, Forward-Active, Reverse-Active, etc. ) for each transistor below. For the NMOS and PMOS transistors, assume: L = 0.1 μm, W = 1.2 μm, |Vt0| = 0.4 V, |γ| = 0.4 V0.5, ϕf = 0.3 V, Ec = 1.5×106 V/m, and μCOX = 200 μA/V2.

Problem 1: Determine the region of operation (e. g. , Cutoff, Linear, Blown-up, Triode, Ohmic, Resistive, Saturation, Forward-Active, Reverse-Active, etc. ) for each transistor below. For the NMOS and PMOS transistors, assume: L = 0.1 μm, W = 1.2 μm, |Vt0| = 0.4 V, |γ| = 0.4 V0.5, ϕf = 0.3 V, Ec = 1.5×106 V/m, and μCOX = 200 μA/V2.

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Problem 1: Determine the region of operation (e.g., Cutoff, Linear, Blown-up, Triode, Ohmic, Resistive, Saturation, Forward-Active, Reverse-Active, etc.) for each transistor below. For the NMOS and PMOS transistors, assume: L = 0.1 μ m , W = 1.2 μ m , | V t 0 | = 0.4 V , | γ | = 0.4 V 0.5 , ϕ f = 0.3 V , E c = 1.5 × 10 6 V / m , and μ C O X = 200 μ A / V 2 .

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