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Problem 2 (3 points) All transistors are identical and they are arranged in series (they share source/drain regions; their threshold voltage is VT = 1 V; the substrate is grounded. The total capacitance of the gate electrode is Ctot = Cox + Cgs+Cgd+Cpar. Assume that for parasitic capacitance Cpar = 0.1Ctot . A) What is the floating voltage value of the channel regions in transistors 2 and 3 ? B) What is the potential of source and drain region of transistor 5?

Problem 2 (3 points) All transistors are identical and they are arranged in series (they share source/drain regions; their threshold voltage is VT = 1 V; the substrate is grounded. The total capacitance of the gate electrode is Ctot = Cox + Cgs+Cgd+Cpar. Assume that for parasitic capacitance Cpar = 0.1Ctot . A) What is the floating voltage value of the channel regions in transistors 2 and 3 ? B) What is the potential of source and drain region of transistor 5?

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Problem 2 (3 points) All transistors are identical and they are arranged in series (they share source/drain regions; their threshold voltage is V T = 1 V ; the substrate is grounded. The total capacitance of the gate electrode is C tot = C o x + C g s + C g d + C parr . Assume that for parasitic capacitance C p a r = 0.1 C tot . A) What is the floating voltage value of the channel regions in transistors 2 and 3 ? B) What is the potential of source and drain region of transistor 5 ?

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