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Problem 3: Calculate the dc characteristics of a MOSFET diff-amp shown in Figure. The transistor parameters are: Kn1 = Kn2 = 0.1 mA/V2, Kn3 = Kn4 = 0.3 mA/V2, and for all transistors, λ = 0, and VTN = 1 V. (a) Determine the maximum range of common-mode input voltage. (b) Determine the differential-mode voltage gain, common-mode voltage gain, and CMRR. Assume λ = 0.01 V−1 for M4.

Problem 3: Calculate the dc characteristics of a MOSFET diff-amp shown in Figure. The transistor parameters are: Kn1 = Kn2 = 0.1 mA/V2, Kn3 = Kn4 = 0.3 mA/V2, and for all transistors, λ = 0, and VTN = 1 V. (a) Determine the maximum range of common-mode input voltage. (b) Determine the differential-mode voltage gain, common-mode voltage gain, and CMRR. Assume λ = 0.01 V−1 for M4.

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Problem 3: Calculate the dc characteristics of a MOSFET diff-amp shown in Figure. The transistor parameters are: K n 1 = K n 2 = 0.1 m A / V 2 , K n 3 = K n 4 = 0.3 m A / V 2 , and for all transistors, λ = 0 , and V T N = 1 V . (a) Determine the maximum range of common-mode input voltage. (b) Determine the differential-mode voltage gain, common-mode voltage gain, and CMRR. Assume λ = 0.01 V − 1 for M 4 .

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QUESTION 14: The bias voltages in the diff-amp shown in Figure P11.31 are changed to V+ = 7 V and V− = −7 V. The transistor parameters are Kn1 = Kn2 = 100 mA/V2, Kn3 = Kn4 = 190 mA/V2, λ1 = λ2 = 0, λ3 = λ4 = 14 mV−1 and VTN = 0.3 V (all transistors). Design the circuit such that VDS1 = VDS2 = 4 V and ID1 = ID2 = 67 μA when v1 = v2 = −1.15 V. Calculate the change in IQ if v1 = v2 = +1.15 V. RD (kΩ) Format : 99.602524478406 R1 (kΩ) Format : 702.07048099988 δIQ (μA) Format : 4.9266 Figure P11.31
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To improve the performance of the differential amplifier shown in Figure Q1, the biasing current source is replaced by a Widlar current source. The collector resistors are replaced by a current mirror formed by the matched bipolar transistors Qs and Q6, and the bipolar transistors Q1 and Q2 are replaced by the matched field-effect transistors M1 and M2. A single-sided output at the drain terminal of M2 is used. The transistor parameters for the bipolar transistors are: β = 100, VBE (on) = VEB(on) = 0.7 V, and VA = 100 V. The transistor parameters for M1 and M2 are: Kn = 0.15 mA/V2, VT N = 0.8 V, λ = 0.01 V-1 . The improved differential amplifier is shown in Figure Q2. (a) Determine the quiescent voltages and currents of M1 and M2 when v1 = v2 = 0. (4 marks) (b) Design the value of resistor RE such that IQ = 0.1 mA. (2 marks) (c) Determine the maximum and minimum common-mode voltages that can be applied to v1 and v2. (3 marks) (d) Determine the percentage change in IQ when the common-mode voltage applied to v1 and v2 changes from the maximum to the minimum value obtained in part (c). (5 marks) (c) Define vd = v1 - v2, determine the differential-mode voltage gain Ad of the improved differential amplifier.
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Transistors' Parameters Kn1 = Kn2 = Kn4 = 1 mA/V2; Kn3 = 2 mA/V2 VTn = 1 V (for all) λ1 = λ2 = λ4 = 0, λ3 = 0.01 V−1 Circuit Parameters VDD = 12 VRD1 = RD2 = 4 K Circuit Parameters i) Determine RF to set Iref to 1 mA. ii) Determine the DC values and states of the transistors. iii) Determine Acm, Adm and CMRR.

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