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Problem 3: Consider the NMOS inverter with enhancement load driven by an NMOS transmission gate in the figure below. The threshold voltage of each n-channel transistor is VTN = 0.5 V. Neglect the body effect. Design the KD/KL of the inverter such that vo = 0.1 V when vI = 2.8 V and ϕ = 3.3 V.

Problem 3: Consider the NMOS inverter with enhancement load driven by an NMOS transmission gate in the figure below. The threshold voltage of each n-channel transistor is VTN = 0.5 V. Neglect the body effect. Design the KD/KL of the inverter such that vo = 0.1 V when vI = 2.8 V and ϕ = 3.3 V.

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Problem 3: Consider the NMOS inverter with enhancement load driven by an NMOS transmission gate in the figure below. The threshold voltage of each n -channel transistor is V T N = 0.5 V . Neglect the body effect. Design the K D / K L of the inverter such that v o = 0.1 V when v I = 2.8 V and ϕ = 3.3 V .

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