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Problem 4: MOSFET inverse modeling 24 pts Consider the following device:What is Vtn ? What is the region of operation of C ? What is the region of operation of D ? What is ro at point A ? What would ID be at VDS = 10 V and VGS = 5 V ? (neglect channel length modulation)What would ID be at VDS = 15 V and VGS = 4 V ? (do not neglect channel length modulation for this one)

Problem 4: MOSFET inverse modeling 24 pts Consider the following device:What is Vtn ? What is the region of operation of C ? What is the region of operation of D ? What is ro at point A ? What would ID be at VDS = 10 V and VGS = 5 V ? (neglect channel length modulation)What would ID be at VDS = 15 V and VGS = 4 V ? (do not neglect channel length modulation for this one)

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Problem 4: MOSFET inverse modeling 24pts
Consider the following device:
  1. What is V t n ?
  2. What is the region of operation of C ?
  3. What is the region of operation of D ?
  4. What is r o at point A ?
  5. What would I D be at V D S = 10 V and V G S = 5 V ? (neglect channel length modulation)
  6. What would I D be at V D S = 15 V and V G S = 4 V ? (do not neglect channel length modulation for this one)

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