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Problem 5.5(a): An NMOS transistor fabricated in a technology for which kn′ = 511 μA/V2 and Vt = 0.4 V. It is required to operate with a small VDS as a variable resistor by varying the control voltage, VGS, from 0.5 V to 1.0 V. The transistor has the minimum channel length for this technology, Lmin = 0.130 μm. Specify the transistor width, W[ in μm], required to achieve a minimum resistance of 0.3 kΩ.

Problem 5.5(a): An NMOS transistor fabricated in a technology for which kn′ = 511 μA/V2 and Vt = 0.4 V. It is required to operate with a small VDS as a variable resistor by varying the control voltage, VGS, from 0.5 V to 1.0 V. The transistor has the minimum channel length for this technology, Lmin = 0.130 μm. Specify the transistor width, W[ in μm], required to achieve a minimum resistance of 0.3 kΩ.

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Problem 5.5(a): An NMOS transistor fabricated in a technology for which k n ′ = 511 μ A / V 2 and V t = 0.4 V . It is required to operate with a small V D S as a variable resistor by varying the control voltage, V G S , from 0.5 V to 1.0 V . The transistor has the minimum channel length for this technology, L min = 0.130 μ m . Specify the transistor width, W [ in μ m ] , required to achieve a minimum resistance of 0.3 k Ω .

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