Problem 5.5(a): An NMOS transistor fabricated in a technology for whic

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Problem 5.5(a): An NMOS transistor fabricated in a technology for which kn′ = 511 μA/V2 and Vt = 0.4 V. It is required to operate with a small VDS as a variable resistor by varying the control voltage, VGS, from 0.5 V to 1.0 V. The transistor has the minimum channel length for this technology, Lmin = 0.130 μm. Specify the transistor width, W[ in μm], required to achieve a minimum resistance of 0.3 kΩ.

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Problem 5.5(a): An NMOS transistor fabricated in a technology for which

k_{n}^{'} = 511 μ A / V^{2}

and

V_{t} = 0.4 V

. It is required to operate with a small

V_{D S}

as a variable resistor by varying the control voltage,

V_{G S}

, from

0.5 V

to

1.0 V

. The transistor has the minimum channel length for this technology,

L_{min} = 0.130 μ m

. Specify the transistor width,

W [

in

μ m]

, required to achieve a minimum resistance of

0.3 k Ω

.

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