Problem 5.5(b): An NMOS transistor fabricated in a technology for whic

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Problem 5.5(b): An NMOS transistor fabricated in a technology for which kn′ = 511 μA/V2 and Vt = 0.4 V is required to operate with a small VDS as a variable resistor by varying the control voltage, VGS. The transistor is sized so that (W/L) = 10. Specify the value of VGS [in Volts] required to achieve a resistance of 0.6 kΩ.

Problem 5.5(b): An NMOS transistor fabricated in a technology for which kn′ = 511 μA/V2 and Vt = 0.4 V is required to operate with a small VDS as a variable resistor by varying the control voltage, VGS. The transistor is sized so that (W/L) = 10. Specify the value of VGS [in Volts] required to achieve a resistance of 0.6 kΩ.

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Problem 5.5(b): An NMOS transistor fabricated in a technology for which

k_{n}^{'} = 511 μ A / V^{2}

and

V_{t} = 0.4 V

is required to operate with a small

V_{D S}

as a variable resistor by varying the control voltage,

V_{G S}

. The transistor is sized so that

(W / L) = 10

. Specify the value of

V_{G S}

[in Volts] required to achieve a resistance of

0.6 k Ω

.

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