Question

Notify Me Bookmark

Q1. A NMOS source-follower circuit is show below. All three transistors used are identical with Vth = 0.5 V and μnCoxW/L = 20 mA/V2. For linear operation, what are the upper and lower limits of the output voltage, and the corresponding inputs. Calculate the average propagation delay of CMOS symmetric inverter shown in the figure below for C = 0.3 pF. Given KN′ = 100 μAV2 and VTN = 0.6 V. 1.2 ns 4.8 ns 3.6 ns 2.4 ns

Q1. A NMOS source-follower circuit is show below. All three transistors used are identical with Vth = 0.5 V and μnCoxW/L = 20 mA/V2. For linear operation, what are the upper and lower limits of the output voltage, and the corresponding inputs. Calculate the average propagation delay of CMOS symmetric inverter shown in the figure below for C = 0.3 pF. Given KN′ = 100 μAV2 and VTN = 0.6 V. 1.2 ns 4.8 ns 3.6 ns 2.4 ns

Image text
Q1. A NMOS source-follower circuit is show below. All three transistors used are identical with V t h = 0.5 V and μ n C o x W / L = 20 m A / V 2 . For linear operation, what are the upper and lower limits of the output voltage, and the corresponding inputs.
Calculate the average propagation delay of CMOS symmetric inverter shown in the figure below for C = 0.3 p F .
Given K N ′ = 100 μ A V 2 and V T N = 0.6 V . 1.2 n s 4.8 n s 3.6 n s 2.4 n s

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up

Similar/Related Questions

Calculate the average propagation delay of CMOS symmetric inverter shown in the figure below for C = 0.3 pF. Given KN′ = 100 μAV2 and VTN = 0.6 V. 1.2 ns 4.8 ns 3.6 ns 2.4 ns Calculate the average propagation delay of CMOS symmetric inverter shown in the figure below for C = 0.3 pF. Given KN′ = 100 μAV2 and VTN = 0.6 V. 1.2 ns 4.8 ns 3.6 ns 2.4 ns

Solution
0 0

Given VDD = 1.2 V, CL = 100 fF, and fCLK = 1.5 GHz, KN = 100 uA/V2, and VTn = 0.5 V. (Ignore channel length modulation factor) i) Draw the transistor schematic for implementing logic function F = A+BCD using static CMOS gate. ii) Size the transistors for worst-case pull-up and pull-down with respect to the following inverter shown in the figure below. iii) Compute the activity coefficient for both the output transitions (0 to 1 and 1 to 0) using a truth table. iv) Calculate the expected power dissipation. v) For the CMOS base combination circuit design in ii) determine the best case Tp(90% - 10%) using average current model.
Solution
0 0

For the saturated load inverter shown in Figure 16.9(a), assume transistor parameters of VTNDO = VTNLO = 0.5 V, KD = 200 μA/V2, KL = 20 μA/V2, γ = 0.25 V1/2, and φfp = 0.35 V. Determine vO for vI = 0.12 V for the case when (a) the body effect is neglected and (b) the body effect is taken into account. Consider the NMOS inverter with depletion load in Figure 16.9(b). The transistor parameters are VTNDO = 0.4 V, VTNLO = -0.6 V, K D = 100 μA/V2, KL = 20 μA/V2, γ = 0.25 V1/2, and φfp = 0.35 V. Determine vI when vO = 1.25 V for the case when (a) the body effect is neglected and (b) the body effect is taken into account.

For the saturated load inverter shown in Figure 16.9(a), assume transistor parameters of VTNDO = VTNLO = 0.5 V, KD = 200 μA/V2, KL = 20 μA/V2, γ = 0.25 V1/2, and φfp = 0.35 V. Determine vO for vI = 0.12 V for the case when (a) the body effect is neglected and (b) the body effect is taken into account. Consider the NMOS inverter with depletion load in Figure 16.9(b). The transistor parameters are VTNDO = 0.4 V, VTNLO = -0.6 V, K D = 100 μA/V2, KL = 20 μA/V2, γ = 0.25 V1/2, and φfp = 0.35 V. Determine vI when vO = 1.25 V for the case when (a) the body effect is neglected and (b) the body effect is taken into account.
Solution
0 0