Question

Notify Me Bookmark

Q1) The parameters of the MOSFET in the circuit shown in the figure are VTN = 0.7 V, Kn = 0.8 mA/V2, and λ = 0.02 V-1. Determine RS and RD such that IDQ = 0.1 mA and VDSQ = 6 V.

Q1) The parameters of the MOSFET in the circuit shown in the figure are VTN = 0.7 V, Kn = 0.8 mA/V2, and λ = 0.02 V-1. Determine RS and RD such that IDQ = 0.1 mA and VDSQ = 6 V.

Image text
Q1) The parameters of the MOSFET in the circuit shown in the figure are V T N = 0.7 V , = 6 V .

Detailed Answer

2 0

Please enter your email here. You will get email when this question is answered by our tutor.

Answer
Doubtrix Logo

This Problem has been solved!

You'll get a detailed, step-by-step and expert verified solution.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up
  • Student Reviews:
  • (2)
  • Correct answers (2)
  • Complete solution (2)
  • Step-by-step solution (2)
  • Fully explained (2)

Similar/Related Questions

The parameters of the MOSFET in the circuit shown below are VTN = −1 V, Kn = 1.7 mA/V2, and λ = 0.02 V−1. a) Determine the values of RS and RD such that IDQ = 0.1 mA and a maximum symmetrical 1V peak sinusoidal signal occurs at the output. b) Find the small-signal transistor parameters. c) Determine the small-signal voltage gain Av = vo/vs.
Solution
2 0

Ex 4.2: For the circuit shown in Figure 4.1, VDD = 3.3 V and RD = 10 kΩ. The transistor parameters are VTN = 0.4 V, kn′ = 100 μA/V2, W/L = 50, and λ = 0.025 V−1. Assume the transistor is biased such that IDQ = 0.25 mA. (a) Verify that the transistor is biased in the saturation region. (b) Determine the small-signal parameters gm and ro. (c) Determine the small-signal voltage gain. (Ans. (a) VGSQ = 0.716 V and VDSQ = 0.8 V so that VDS > VDS (sat); (b) gm = 1.58 mA/V, ro = 160 kΩ; (c) -14.9) Figure 4.1 NMOS common-source circuit with time-varying signal source in series with gate dc source

Ex 4.2: For the circuit shown in Figure 4.1, VDD = 3.3 V and RD = 10 kΩ. The transistor parameters are VTN = 0.4 V, kn′ = 100 μA/V2, W/L = 50, and λ = 0.025 V−1. Assume the transistor is biased such that IDQ = 0.25 mA. (a) Verify that the transistor is biased in the saturation region. (b) Determine the small-signal parameters gm and ro. (c) Determine the small-signal voltage gain. (Ans. (a) VGSQ = 0.716 V and VDSQ = 0.8 V so that VDS > VDS (sat); (b) gm = 1.58 mA/V, ro = 160 kΩ; (c) -14.9) Figure 4.1 NMOS common-source circuit with time-varying signal source in series with gate dc source
Solution
0 0

The parameters of the transistor in the circuit shown in Figure 1 are VTN = 0.8 V, Kn = 1 mA/V2, and λ = 0. Find the operating point (IDQ, VGSQ, VDSQ) and RD such that VD = 1.5 V. Draw the small signal circuit and determine the small-signal voltage gain Av = vo/vi; (i) without RL (ii) with RL = 5 kΩ
Solution
3 0