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Q2. The energy band diagram for an MOS capacitor is sketched below. Assume T = 300 K and an oxide thickness = 1.1 nm. Answer the following questions: (5×10) = 50 points (a) Is the semiconductor (Si) N-type or P-type? Find the doping density. (1+4) (b) What is the mode of operation (accumulation, flat band, depletion or inversion) of the MOS capacitor shown above? Explain your answer. (c) What are electron and hole density at the x = 0?

Q2. The energy band diagram for an MOS capacitor is sketched below. Assume T = 300 K and an oxide thickness = 1.1 nm. Answer the following questions: (5×10) = 50 points (a) Is the semiconductor (Si) N-type or P-type? Find the doping density. (1+4) (b) What is the mode of operation (accumulation, flat band, depletion or inversion) of the MOS capacitor shown above? Explain your answer. (c) What are electron and hole density at the x = 0?

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Q2. The energy band diagram for an MOS capacitor is sketched below. Assume T = 300 K and an oxide thickness = 1.1 n m . Answer the following questions: ( 5 × 10 ) = 50 points (a) Is the semiconductor ( S i ) N-type or P-type? Find the doping density. (1+4) (b) What is the mode of operation (accumulation, flat band, depletion or inversion) of the MOS capacitor shown above? Explain your answer. (c) What are electron and hole density at the x = 0 ?

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Q2. The energy band diagram for an MOS capacitor is sketched below. Assume T = 300 K and an oxide thickness = 1.1 nm. Answer the following questions: (5×10) = 50 points (a) Is the semiconductor (Si) N-type or P-type? Find the doping density. (1+4) (b) What is the mode of operation (accumulation, flat band, depletion or inversion) of the MOS capacitor shown above? Explain your answer. (c) What are electron and hole density at the x = 0 ? (d) What is the voltage drop in Si ? (e) Find the value of depletion width ( Wdep ). (f) Calculate the voltage drop in oxide. (g) Calculate the electric field in oxide. (h) Calculate the electric field in Si at x = 0. (i) Find the flat band voltage.
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Problem 1: Consider a silicon MOS capacitor with a C-V characteristic as shown below. The gate insulator is SiO2. The measured maximum and minimum capacitance values are Cmax = 1.2×10−2 F/m2 and Cmin = 9.5×10−4 F/m2. Assume T = 300 K. (a) Is this C-V characteristic measured at low frequency or high frequency? (10 points) (b) What is the thickness of the SiO2 gate insulator? (10 points) (c) What is the depletion layer capacitance at the onset of inversion? (10 points) (d) What is the doping density of silicon in this MOS capacitor? (10 points)
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