Q2. The following circuits use MOS transistors with the following para

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Q2. The following circuits use MOS transistors with the following parameters; Vtnn = 0.4 V, VTp = −0.4 V, kn = 400 μA/V2 and kp = 100 μA/V2. Assume λ = γ = 0. (8 pts) For the circuit in Fig. 2 assume W/L = 5/1 and R = 2kΩ. The reference current, Iref , and drain-source voltage VDS, are; a) 2.5 mA, 0.5 V b) 0.65 mA, 1.5 c) 0.8 mA, 1.2 V d) 0.65 mA, 1.2 V e) None of the above Fig. 2 MOSFET Bias Circuit

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V d d = 2.5 V

Q2. The following circuits use MOS transistors parameters;

V_{{t n}_{n}} = 0.4 V, V_{T_{p}} = - 0.4 V

, and

k_{p} = 100 μ A / V^{2}

. Assume

λ = γ = 0

(8

pts)

For the circuit in Fig. 2 assume W/L= The reference current, $I_{rff}$ , and drain $V_{D s}$ , are; a) $2.5 m A, 0.5 V$ b) $0.65 m A, 1.5$ c) $0.8 m A, 1.2 V$ d) $0.65 m A, 1.2 V$ Fig. 2 MOSFET Bias Circuit e) None of the above