Q3) Consider a CMOS process for which tox = 6 nm, μn = 460 cm2 /V.s, a

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Q3) Consider a CMOS process for which tox = 6 nm, μn = 460 cm2 /V.s, and VT = 0.5 V. (a) Find Cox and k'. (b) For an NMOS transistor with W/L = 20 μm/0.25 μm, calculate the values of VGS and minimum VDS needed to operate the transistor in the saturation region with ID = 0.5 mA.

Q3) Consider a CMOS process for which tox = 6 nm, μn = 460 cm2 /V.s, and VT = 0.5 V. (a) Find Cox and k'. (b) For an NMOS transistor with W/L = 20 μm/0.25 μm, calculate the values of VGS and minimum VDS needed to operate the transistor in the saturation region with ID = 0.5 mA.

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Q3) Consider a CMOS process for which

t_{o x} = 6 n m, μ_{n} = 460 {c m}^{2} / V . s

, and

V_{T} = 0.5 V

. (a) Find

C_{o x}

and

k

'. (b) For an NMOS transistor with

W / L = 20 μ m / 0.25 μ m

, calculate the values of

V_{G S}

and minimum

V_{D S}

needed to operate the transistor in the saturation region with

I_{D} = 0.5 m A

.

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