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Q5) In the following MOSFET transistor, a) State the operation region of the transistor (proof whether it is in cutt-off saturation or triod region) b) Design the following circuit to estabilish a drain voltage 0.10 V. Find the value of RD. Find the effective resistance of drain and source at this operating point. Let the MOSFET transistor have Vt = 1 V, kn′(W/L) = μnCox = 1.2 mA/V2. Neglect the channel length modulation effect (assume λ = 0)

Q5) In the following MOSFET transistor, a) State the operation region of the transistor (proof whether it is in cutt-off saturation or triod region) b) Design the following circuit to estabilish a drain voltage 0.10 V. Find the value of RD. Find the effective resistance of drain and source at this operating point. Let the MOSFET transistor have Vt = 1 V, kn′(W/L) = μnCox = 1.2 mA/V2. Neglect the channel length modulation effect (assume λ = 0)

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Q5) In the following MOSFET transistor, a) State the operation region of the transistor (proof whether it is in cutt-off saturation or triod region) b) Design the following circuit to estabilish a drain voltage 0.10 V . Find the value of R D . Find the effective resistance of drain and source at this operating point. Let the MOSFET transistor have V t = 1 V , k n ′ ( W / L ) = μ n C o x = 1.2 m A / V 2 . Neglect the channel length modulation effect (assume λ = 0 )

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