Question 1 (6): Consider a pseudo-NMOS inverter fabricated in 0.42−μm

Question

Notify Me Bookmark

Question 1 (6): Consider a pseudo-NMOS inverter fabricated in 0.42−μm CMOS technology for which assuming λ1 = λ2 = 0, R = 1 K, Vtn = −Vtp = Vt, kn = 132 μA/V2, Vt = 0.5 V, VDD = 2 V, and kn = 2 kp. (a) Find VG, VO, ID when VI = OV and VI = VDD;

Question 1 (6): Consider a pseudo-NMOS inverter fabricated in 0.42−μm CMOS technology for which assuming λ1 = λ2 = 0, R = 1 K, Vtn = −Vtp = Vt, kn = 132 μA/V2, Vt = 0.5 V, VDD = 2 V, and kn = 2 kp. (a) Find VG, VO, ID when VI = OV and VI = VDD;

Image text

Question 1 (6): Consider a pseudo-NMOS inverter fabricated in

0.42 - μ m

CMOS technology for which assuming

λ_{1} = λ_{2} = 0, R = 1 K, V_{t n} = - V_{t p} = V_{t}, k_{n} = 132 μ A / V^{2}, V_{t} = 0.5 V, V_{D D} = 2 V

, and

k_{n} = 2 k_{p}

. (a) Find

V_{G}, V_{O}, I_{D}

when

V_{I} = O V

and

V_{I} = V_{D D}

;

Detailed Answer

Ask Your Doubt Rate This Answer Request Video Solution

Previous question

Next question

Submit Questions

Similar/Related Questions

Solution

Solution

Solution