Question 10. The pMOSFET circuit below has VDD = −8 V, Vt = −1 V, k =

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Question 10. The pMOSFET circuit below has VDD = −8 V, Vt = −1 V, k = 0.75 mA/V2 and λ = 0. Specify suitable resistance values to bias the device at ID = 1.5 mA with VD halfway between the values corresponding to the edge of conduction (EOC) and the edge of saturation (EOS). Specify R1 and R2 in the mega-ohm range. (1 Point)

Question 10. The pMOSFET circuit below has VDD = −8 V, Vt = −1 V, k = 0.75 mA/V2 and λ = 0. Specify suitable resistance values to bias the device at ID = 1.5 mA with VD halfway between the values corresponding to the edge of conduction (EOC) and the edge of saturation (EOS). Specify R1 and R2 in the mega-ohm range. (1 Point)

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Question 10. The pMOSFET circuit below has

V_{D D} = - 8 V, V_{t} = - 1 V, k = 0.75 m A / V^{2}

and

λ = 0

. Specify suitable resistance values to bias the device at

I_{D} = 1.5 m A

with

V_{D}

halfway between the values corresponding to the edge of conduction (EOC) and the edge of saturation (EOS). Specify

R_{1}

and

R_{2}

in the mega-ohm range. (1 Point)

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