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Question 2 (15 points) One I−V curve of an ideal long-channel MOSFET is shown below. You may or may not need the following information: m = 1, L = 2 μm, W = 10 μm, Tox = 10 nm. a) [4 pts] Find the threshold voltage Vt from the plot. b) [5 pts] Calculate the effective carrier mobility μeff. . c) [6 pts] Suppose the gate voltage is changed such that Vgs = 3 V. Calculate IDsat and VDsat , and sketch the I−V curve for the new condition.

Question 2 (15 points) One I−V curve of an ideal long-channel MOSFET is shown below. You may or may not need the following information: m = 1, L = 2 μm, W = 10 μm, Tox = 10 nm. a) [4 pts] Find the threshold voltage Vt from the plot. b) [5 pts] Calculate the effective carrier mobility μeff. . c) [6 pts] Suppose the gate voltage is changed such that Vgs = 3 V. Calculate IDsat and VDsat , and sketch the I−V curve for the new condition.

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Question 2 (15 points) One I − V curve of an ideal long-channel MOSFET is shown below. You may or may not need the following information: m = 1 , L = 2 μ m , W = 10 μ m , T o x = 10 n m . a) [ 4 p t s ] Find the threshold voltage V t from the plot. b) [ 5 p t s ] Calculate the effective carrier mobility μ eff. . c) [6 pts] Suppose the gate voltage is changed such that V g s = 3 V . Calculate I Dsat and V Dsat , and sketch the I − V curve for the new condition.

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