Question 4. [6] You are required to design the smallest SRAM cell sati

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Question 4. [6] You are required to design the smallest SRAM cell satisfying the read stability and writability requirements in a 0.13 μm process. The process parameters are given below. Assume Lmin = 2 λ, and Wmin = 4 λ. Kn′ = 3 Kp′ = 300 μANVtn = |Vtp | = 0.4 VVDD = 1.2 VCdμ = Cgμ = 1 fF/μm a) [4] What are the widths of M1, M3, and M5 if only integer transistor W/L ratios are allowed? W1 = W3 = W5 =

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Question 4. [6] You are required to design the smallest SRAM cell satisfying the read stability and writability requirements in a

0.13 μ m

process. The process parameters are given below. Assume

L_{min} = 2 λ

, and

W_{min} = 4 λ

$K_{n}^{'} = 3 K_{p}^{'} = 300 μ A N$
$V_{tn} = | V_{tp} | = 0.4 V$
$V_{D D} = 1.2 V$
$C_{d μ} = C_{g μ} = 1 f F / μ m$ a) [4] What are the widths of $M_{1}, M_{3}$ , and $M_{5}$ if only integer transistor W/L ratios are allowed?