Question 8. The pMOSFET circuit below has VSS = −VDD = 6 V, Vt = −1 V,

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Question 8. The pMOSFET circuit below has VSS = −VDD = 6 V, Vt = −1 V, k = 0.25 mA/V2 and λ = 0. (1 Point) (a) Specify RS and RD to bias the FET at the edge of saturation (EOS) with ID = 0.5 mA. (b) Specify RS and RD to bias the FET with ID = 2 mA and VSD = 2 V. (c) What happens if the value of RD obtained in part (b) is doubled? What is the new operating point of the FET?

Question 8. The pMOSFET circuit below has VSS = −VDD = 6 V, Vt = −1 V, k = 0.25 mA/V2 and λ = 0. (1 Point) (a) Specify RS and RD to bias the FET at the edge of saturation (EOS) with ID = 0.5 mA. (b) Specify RS and RD to bias the FET with ID = 2 mA and VSD = 2 V. (c) What happens if the value of RD obtained in part (b) is doubled? What is the new operating point of the FET?

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Question 8. The pMOSFET circuit below has

V_{S S} = - V_{D D} = 6 V, V_{t} = - 1 V, k = 0.25

m A / V^{2}

and

λ = 0

. (1 Point)
(a) Specify

R_{S}

and

R_{D}

to bias the FET at the edge of saturation (EOS) with

I_{D} = 0.5 m A

.
(b) Specify

R_{S}

and

R_{D}

to bias the FET with

I_{D} = 2 m A

and

V_{S D} = 2 V

.
(c) What happens if the value of

R_{D}

obtained in part (b) is doubled? What is the new operating point of the FET?

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